Skip to main content

Research Repository

Advanced Search

Dr NEO LOPHITIS


Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs (2022)
Conference Proceeding
Almpanis, I., Antoniou, M., Evans, P., Empringham, L., Gammon, P., Udrea, F., …Lophitis, N. (2022). Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs.

Silicon Carbide (SiC) N-channel Insulated Gate Bipolar Transistors (n-IGBTs) rated higher than 10kV can improve Medium Voltage and High Voltage power electronics due to the favourable combination of SiC material with the nIGBT device structure. This... Read More about Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs.

Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT (2022)
Conference Proceeding
Almpanis, I., Gammon, P., Mawby, P., Evans, P., Empringham, L., Lophitis, N., …Udrea, F. (2022). Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT. In IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe). https://doi.org/10.1109/WiPDAEurope55971.2022.9936475

This paper presents a comprehensive shortcircuit robustness investigation of 4H- Silicon Carbide (SiC) ntype Insulated Gate Bipolar Transistors (nIGBTs) for MediumVoltage and High-Voltage applications. Numerical electrothermal TCAD simulations evalua... Read More about Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT.

On the 3C-SiC/SiO 2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage (2022)
Conference Proceeding
Lophitis, N., Arvanitopoulos, A., Jennings, M. R., Mawby, P. A., & Antoniou, M. (2022). On the 3C-SiC/SiO 2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage. . https://doi.org/10.1109/WiPDAEurope55971.2022.9936319

Cubic (3C-) silicon carbide (SiC) metal oxide semiconductor (MOS) devices have the potential to achieve superior performance and reliability. The effective channel mobility can be significantly higher compared to other SiC polytypes due to the smalle... Read More about On the 3C-SiC/SiO 2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage.

An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices (2022)
Conference Proceeding
Lophitis, N., Perkins, S., Arvanitopoulos, A., Faramehr, S., & Igic, P. (2022). An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). https://doi.org/10.1109/WiPDAEurope55971.2022.9936253

This work provides an experimentally driven performance comparison of commercial Gallium Nitride on Silicon (GaN-on-Si) power devices rated 600-650V at room and elevated temperatures with the focus being in assessing the on resistance (RON) increase... Read More about An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices.

The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor (2022)
Conference Proceeding
Cao, Q., Gammon, P. M., Renz, A. B., Zhang, L., Baker, G., Antoniou, M., & Lophitis, N. (2022). The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). https://doi.org/10.1109/WiPDAEurope55971.2022.9936508

A 15kV SiC thyristor is analysed, considering for the first time the design properties that will ensure the safe, stable operation of the device as an integrated gate commutated thyristor (IGCT), while also minimizing its on-state losses. Key to the... Read More about The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor.

0kV+ rated SiC n-IGBTs: novel collector side design approach breaking the trade-off between dV/dt and device efficiency (2022)
Conference Proceeding
Almpanis, I., Evans, P., Antoniou, M., Gammon, P., Lee, E., Undrea, F., …Lophitis, N. (2022). 0kV+ rated SiC n-IGBTs: novel collector side design approach breaking the trade-off between dV/dt and device efficiency.

10kV+ rated 4H-Silicon Carbide (SiC) Insulated Gate Bipolar Transistors (IGBTs) have the potential to become the devices of choice in future Medium Voltage (MV) and High Voltage (HV) power converters. One significant performance concern of SiC IGBTs... Read More about 0kV+ rated SiC n-IGBTs: novel collector side design approach breaking the trade-off between dV/dt and device efficiency.

Gate-Commutated Thyristor cell with a base region having a varying thickness (2022)
Patent
Umamaheswara, . V., Lophitis, N., Jan, . V., Florin, U., Thomas, S., Chiara, C., & Marina, A. (2022). Gate-Commutated Thyristor cell with a base region having a varying thickness. EP4053915A1. European Patent Office

A power semiconductor device (1) comprises a gate-commutated thyristor cell (20) including a cathode electrode (2), a cathode region (9) of a first conductivity type, a base layer (8) of a second conductivity type, a drift layer (7) of the first cond... Read More about Gate-Commutated Thyristor cell with a base region having a varying thickness.

Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design (2022)
Journal Article
Zhang, L. Y., Dai, T. X., Gammon, P. M., Lophitis, N., Udrea, F., Tiwari, A., …Antoniou, M. (2022). Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design. Materials Science Forum, 1062, 504-508. https://doi.org/10.4028/p-13z22g

The commercial success of silicon carbide (SiC) diodes and MOSFETs for the automotive industry has led many in the field to begin developing ultra-high voltage (UHV) SiC insulated gate bipolar transistors (IGBTs), rated from 6 kV to 30 kV, for future... Read More about Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design.

Compact Trench Floating Field Rings Termination for 10kV+ Rated SiC n-IGBTs (2022)
Journal Article
Lophitis, N., Gammon, P. M., Renz, A. B., Dai, T. X., Tiwari, A., Trajkovic, T., …Antoniou, M. (2022). Compact Trench Floating Field Rings Termination for 10kV+ Rated SiC n-IGBTs. Materials Science Forum, 1062, 598-602. https://doi.org/10.4028/p-64ey6u

This work presents the design methodology and performance of a compact edge termination structure aiming 10kV+ rated Silicon Carbide (SiC) devices. Standard Floating Field Rings (FFRs) for such high voltage rating SiC devices are not favored because... Read More about Compact Trench Floating Field Rings Termination for 10kV+ Rated SiC n-IGBTs.