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Dr NEO LOPHITIS


Universal Li-Ion Cell Electro-Thermal Model (2020)
Journal Article
Stocker, R., Mumtaz, A., Braglia, M., & Lophitis, N. (2020). Universal Li-Ion Cell Electro-Thermal Model. IEEE Transactions on Transportation Electrification, https://doi.org/10.1109/TTE.2020.2986606

This paper describes and verifies a Li-ion cell electro-thermal model and the associated data analysis process. It is designed to be adaptable and give accurate results across all variations of operating conditions and cell design based only on time... Read More about Universal Li-Ion Cell Electro-Thermal Model.

Integrated Gate Commutated Thyristor: From Trench to Planar (2020)
Conference Proceeding
Vemulapati, U., Stiasny, T., Wikström, T., Lophitis, N., & Udrea, F. (in press). Integrated Gate Commutated Thyristor: From Trench to Planar

The planar Integrated Gate Commutated Thyristor (IGCT) concept is proposed to simplify the fabrication process of the device and improve the ruggedness as well as electrothermal performance of the device. The planar IGCT concept has been verified exp... Read More about Integrated Gate Commutated Thyristor: From Trench to Planar.

The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area (2020)
Conference Proceeding
Antoniou, M., Lophitis, N., Udrea, F., Covarce, C., & De-Michielis, L. (in press). The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area

A novel Trench IGBT design, namely the p-ring Trench Schottky IGBT, with improved latch-up immunity and an enhanced safe-operating area is proposed. This design improves the performance of the FS+ IGBT by facilitating the collection of holes through... Read More about The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area.

Considering Li-Ion Battery Cell Ageing in Automotive Conditions (2019)
Report
Stocker, R., Mathur, P., Mumtaz, A., & Lophitis, N. (2019). Considering Li-Ion Battery Cell Ageing in Automotive Conditions. HORIBA

This paper explores how to understand and use knowledge of cell ageing in automotive conditions. The key problems and considerations of ageing are considered, followed by an explanation of their causes. This is then used to discuss the tools and unde... Read More about Considering Li-Ion Battery Cell Ageing in Automotive Conditions.

Design-of-Experiments Analysis of Li-Ion Cell Capacity Fading in High Temperature Automotive Conditions (2019)
Conference Proceeding
Stocker, R., Mumtaz, A., & Lophitis, N. (2019). Design-of-Experiments Analysis of Li-Ion Cell Capacity Fading in High Temperature Automotive Conditions. In 2019 Electric Vehicles International Conference (EV). https://doi.org/10.1109/EV.2019.8893026

This paper examines the evolution of performance degradation through capacity fade in Li-ion cells when subjected to 8 months of automotive drive cycles in high temperature conditions. This is done by combining a temperature controlled, highly transi... Read More about Design-of-Experiments Analysis of Li-Ion Cell Capacity Fading in High Temperature Automotive Conditions.

A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes (2019)
Journal Article
Arvanitopoulos, A. E., Antoniou, M., Jennings, M. R., Perkins, S., Gyftakis, K. N., Mawby, P., & Lophitis, N. (2020). A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8(1), 54-65. https://doi.org/10.1109/JESTPE.2019.2942714

3C-silicon carbide (3C-SiC) Schottky barrier diodes (SBDs) on silicon (Si) substrates (3C-SiC-on-Si) have been found to suffer from excessive subthreshold current, despite the superior electrical properties of 3C-SiC. In turn, that is one of the fact... Read More about A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes.

Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier Diodes (2019)
Conference Proceeding
Arvanitopoulos, A., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N., Antoniou, M., …Lophitis, N. (2019). Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier Diodes. In ECCE 2019: IEEE Energy Conversion Congress and Expo. https://doi.org/10.1109/ECCE.2019.8912232

Monolithic integration of wide bandgap (WBG) devices for power integrated circuits is currently of increased interest. The ability of the cubic phase (3C-) of Silicon Carbide (SiC) to grow heteroepitaxially on Silicon (Si) substrates (3C- SiC-on-Si)... Read More about Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier Diodes.

Frequency Extraction of Current Signal Spectral Components: A New Tool for the Detection of Rotor Electrical Faults in Induction Motors (2019)
Conference Proceeding
Panagiotou, P., Arvanitakis, I., Lophitis, N., & Gyftakis, K. (2019). Frequency Extraction of Current Signal Spectral Components: A New Tool for the Detection of Rotor Electrical Faults in Induction Motors. In Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED). https://doi.org/10.1109/DEMPED.2019.8864893

This work expands the classical current signature analysis in induction machines in a two-stage spectral decomposition manner. The proposed methodology can besummarized in two main steps: initially, the current signals are analyzed using a time frequ... Read More about Frequency Extraction of Current Signal Spectral Components: A New Tool for the Detection of Rotor Electrical Faults in Induction Motors.

On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well (2019)
Conference Proceeding
Tiwari, A. K., Perkins, S., Lophitis, N., Antoniou, M., Trajkovic, T., & Udrea, F. (2019). On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well. In Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED). https://doi.org/10.1109/DEMPED.2019.8864804

The robustness of ultra-high voltage (>10kV) SiC IGBTs comprising of an optimized retrograde p-well is investigated. Under extensive TCAD simulations, we show that in addition to offering a robust control on threshold voltage and eliminating punch-th... Read More about On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well.

Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations (2019)
Conference Proceeding
Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M., Perkins, S., Gyftakis, K., & Lophitis, N. (2019). Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations. In Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED). , (364 -370). https://doi.org/10.1109/DEMPED.2019.8864910

The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxi... Read More about Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations.

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