A semiconductor device and methods for production thereof

Lophitis, Neophytos; Arvanitopoulos, Anastasios

Abstract

A method for producing a semiconductor device, which includes epitaxially forming a first layer of n-type conductivity on a substrate or on a previously epitaxially formed layer; epitaxially forming a body layer of p-type conductivity on the first layer; and doping a portion of the body layer with a dopant to form a JFET region comprising a region of n-type conductivity within the body layer.

Citation

Lophitis, N., & Arvanitopoulos, A. (2021). A semiconductor device and methods for production thereof. WO2021/001645 A1

• Publication Date: Jan 7, 2021
• Deposit Date: Oct 21, 2022
• Public URL: https://nottingham-repository.worktribe.com/output/12622189
• Related Public URLs: https://www.patentguru.com/WO2021001645A1