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A semiconductor device and methods for production thereof

Lophitis, Neophytos; Arvanitopoulos, Anastasios


Anastasios Arvanitopoulos


A method for producing a semiconductor device, which includes epitaxially forming a first layer of n-type conductivity on a substrate or on a previously epitaxially formed layer; epitaxially forming a body layer of p-type conductivity on the first layer; and doping a portion of the body layer with a dopant to form a JFET region comprising a region of n-type conductivity within the body layer.


Lophitis, N., & Arvanitopoulos, A. (2021). A semiconductor device and methods for production thereof. WO2021/001645 A1

Publication Date Jan 7, 2021
Deposit Date Oct 21, 2022
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