Dr NEO LOPHITIS NEO.LOPHITIS@NOTTINGHAM.AC.UK
Assistant Professor
A semiconductor device and methods for production thereof
Lophitis, Neophytos; Arvanitopoulos, Anastasios
Authors
Anastasios Arvanitopoulos
Abstract
A method for producing a semiconductor device, which includes epitaxially forming a first layer of n-type conductivity on a substrate or on a previously epitaxially formed layer; epitaxially forming a body layer of p-type conductivity on the first layer; and doping a portion of the body layer with a dopant to form a JFET region comprising a region of n-type conductivity within the body layer.
Citation
Lophitis, N., & Arvanitopoulos, A. (2021). A semiconductor device and methods for production thereof. WO2021/001645 A1
Publication Date | Jan 7, 2021 |
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Deposit Date | Oct 21, 2022 |
Publicly Available Date | Mar 28, 2024 |
Public URL | https://nottingham-repository.worktribe.com/output/12622189 |
Related Public URLs | https://www.patentguru.com/WO2021001645A1 |
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