Integrated Gate Commutated Thyristor: From Trench to Planar

Vemulapati, Umamaheswara; Stiasny, Thomas; Wikstr�m, Tobias; Lophitis, Neophytos; Udrea, Florin

Abstract

© 2020 IEEE. The planar Integrated Gate Commutated Thyristor (IGCT) concept is proposed to simplify the fabrication process of the device and improve the ruggedness as well as electrothermal performance of the device. The planar IGCT concept has been verified experimentally with 4.5kV devices fabricated on 4-inch Si wafers. Afterwards, the electrical characteristics of the planar IGCT were compared with that of the conventional (with trench or mesa gate) IGCT. Both the planar and the conventional IGCTs are fabricated with corrugated p-base referred to as High Power Technology (HPT) design. In addition, mixed-mode TCAD device simulations have been performed to verify the turn-off failure mechanism and to analyze the electro-thermal performance of the planar IGCT in reference to that of the conventional IGCT.

Citation

Vemulapati, U., Stiasny, T., Wikström, T., Lophitis, N., & Udrea, F. (2020). Integrated Gate Commutated Thyristor: From Trench to Planar. In Proceedings - 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (490-493). https://doi.org/10.1109/ISPSD46842.2020.9170102

• Conference Name: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
• Conference Location: Vienna, Austria
• Start Date: Sep 13, 2020
• End Date: Sep 18, 2020
• Acceptance Date: Jan 20, 2020
• Online Publication Date: Aug 18, 2020
• Publication Date: 2020-09
• Deposit Date: Apr 24, 2020
• Publicly Available Date: Aug 18, 2020
• Volume: 2020-September
• Pages: 490-493
• Series ISSN: 1946-0201
• Book Title: Proceedings - 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
• ISBN: 978-1-7281-4837-3
• DOI: https://doi.org/10.1109/ISPSD46842.2020.9170102
• Keywords: high power semiconductor switch; IGCT, discrete power semiconductor; Thyristor; planar-gate; trench-gate
• Public URL: https://nottingham-repository.worktribe.com/output/4331896
• Publisher URL: https://ieeexplore.ieee.org/document/9170102
• Related Public URLs: https://www.ispsd2020.com/
• Additional Information: © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.