Neophytos Lophitis
Compact Trench Floating Field Rings Termination for 10kV+ Rated SiC n-IGBTs
Lophitis, Neophytos; Gammon, Peter M.; Renz, A. Benjamin; Dai, Tian Xiang; Tiwari, Amit; Trajkovic, Tanya; Mawby, Phillip A.; Udrea, Florin; Antoniou, Marina
Authors
Peter M. Gammon
A. Benjamin Renz
Tian Xiang Dai
Amit Tiwari
Tanya Trajkovic
Phillip A. Mawby
Florin Udrea
Marina Antoniou
Abstract
This work presents the design methodology and performance of a compact edge termination structure aiming 10kV+ rated Silicon Carbide (SiC) devices. Standard Floating Field Rings (FFRs) for such high voltage rating SiC devices are not favored because they are inefficient in terms of the achievable breakdown voltage as a percentage of the 1D maximum, consume large chip area, require high implantation energies and small gaps between rings which can violate fabrication limits. We show that the implantation of Aluminium at the bottom of carefully positioned trenches can be analogous to deep Aluminium implantation in terms of performance, thus annulling the need for small gaps between rings and MeV ion implantation. We optimize the distribution of trenches by placing them in multiple zones of different expansion coefficient. The proposed multi expansion ratio Trench FFR termination was utilized to terminate the active area of a 10kV rated Punch Through n-IGBT having 0.8 μm p-body and 100 μm, 3×1014 cm-3 drift region. We found the 0.6–0.8 µm to be the most optimum trench depth, achieving over 10 kV within less than 500 μm of termination length.
Citation
Lophitis, N., Gammon, P. M., Renz, A. B., Dai, T. X., Tiwari, A., Trajkovic, T., …Antoniou, M. (2022). Compact Trench Floating Field Rings Termination for 10kV+ Rated SiC n-IGBTs. Materials Science Forum, 1062, 598-602. https://doi.org/10.4028/p-64ey6u
Journal Article Type | Article |
---|---|
Acceptance Date | Mar 18, 2022 |
Online Publication Date | May 31, 2022 |
Publication Date | May 31, 2022 |
Deposit Date | Jul 1, 2022 |
Publicly Available Date | Jul 1, 2022 |
Journal | Materials Science Forum |
Print ISSN | 0255-5476 |
Electronic ISSN | 1662-9752 |
Publisher | Trans Tech Publications |
Peer Reviewed | Peer Reviewed |
Volume | 1062 |
Pages | 598-602 |
DOI | https://doi.org/10.4028/p-64ey6u |
Keywords | Mechanical Engineering; Mechanics of Materials; Condensed Matter Physics; General Materials Science |
Public URL | https://nottingham-repository.worktribe.com/output/8310118 |
Publisher URL | https://www.scientific.net/MSF.1062.598 |
Files
Compact Trench Floating Field Rings Termination for 10kV+ Rated SiC n-IGBTs
(1 Mb)
PDF
Publisher Licence URL
https://creativecommons.org/licenses/by/4.0/
Downloadable Citations
About Repository@Nottingham
Administrator e-mail: discovery-access-systems@nottingham.ac.uk
This application uses the following open-source libraries:
SheetJS Community Edition
Apache License Version 2.0 (http://www.apache.org/licenses/)
PDF.js
Apache License Version 2.0 (http://www.apache.org/licenses/)
Font Awesome
SIL OFL 1.1 (http://scripts.sil.org/OFL)
MIT License (http://opensource.org/licenses/mit-license.html)
CC BY 3.0 ( http://creativecommons.org/licenses/by/3.0/)
Powered by Worktribe © 2024
Advanced Search