On the Investigation of the “Anode Side” SuperJunction IGBT Design Concept

Antoniou, Marina; Lophitis, Neophytos; Udrea, Florin; Bauer, Friedhelm; Vemulapati, Umamaheswara Reddy; Badstuebner, Uwe

Abstract

© 2017 IEEE. In this letter, we present the "anode-side" SuperJunction trench field stop+ IGBT concept with drift region SuperJunction pillars placed at the anode side of the structure rather than the cathode side. The extent of the pillars toward the cathode side is shown to pose a tradeoff between fabrication technology capabilities (and cost) versus the device performance, by extensive TCAD simulations. The proposed device structure simplifies the fabrication requirements by steering clear from the need to align the cathode side features with the SuperJunction pillars. It also provides an extra degree of freedom by decoupling the cathode design from the SuperJunction structure. Additionally, the presence of SuperJunction technology in the drift region of the "anode-side" SJ Trench FS+ IGBT results in 20% reduction of ON-state losses for the same switching energy losses or, up to 30% switching losses reduction for the same ON-state voltage drop, compared with a 1.2-kV breakdown rated conventional FS+ Trench IGBT device. The proposed structure also finds applications in reverse conducting IGBTs, where a reduced snapback can be achieved, and in MOS-controlled thyristor devices.

• Journal Article Type: Article
• Acceptance Date: Jun 19, 2017
• Online Publication Date: Jun 22, 2017
• Publication Date: 2017-08
• Deposit Date: Apr 24, 2020
• Publicly Available Date: Apr 28, 2020
• Journal: IEEE Electron Device Letters
• Print ISSN: 0741-3106
• Electronic ISSN: 1558-0563
• Publisher: Institute of Electrical and Electronics Engineers
• Peer Reviewed: Peer Reviewed
• Volume: 38
• Issue: 8
• Pages: 1063-1066
• DOI: https://doi.org/10.1109/led.2017.2718619
• Public URL: https://nottingham-repository.worktribe.com/output/3706536
• Publisher URL: https://ieeexplore.ieee.org/document/7955014
• Additional Information: © 2017 IEEE.Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.