Gate-Commutated Thyristor cell with a base region having a varying thickness

Vemulapati, Umamaheswara; Lophitis, Neophytos; Vobecky, Jan; Udrea, Florin; Stiasny, Thomas; Corvasce, Chiara; Antoniou, Marina

Abstract

A power semiconductor device (1) comprises a gate-commutated thyristor cell (20) including a cathode electrode (2), a cathode region (9) of a first conductivity type, a base layer (8) of a second conductivity type, a drift layer (7) of the first conductivity type, an anode layer (5) of the second conductivity type, an anode electrode (3) and a gate electrode (4). The base layer (8) comprises a cathode base region (81) located between the cathode region (9) and the drift layer (7) and having a first depth (D1), a gate base region (82) located between the gate electrode (4) and the drift layer (7) and having a second depth (D2), and an intermediate base region (83) located between the cathode base region (81) and the gate base region (82) and having two different values of a third depth (D3) being between the first depth (D1) and the second depth (D2).

Citation

Umamaheswara, . V., Lophitis, N., Jan, . V., Florin, U., Thomas, S., Chiara, C., & Marina, A. (2022). Gate-Commutated Thyristor cell with a base region having a varying thickness. EP4053915A1. European Patent Office

• Online Publication Date: Sep 7, 2022
• Publication Date: Sep 7, 2022
• Deposit Date: Oct 21, 2022
• Public URL: https://nottingham-repository.worktribe.com/output/12622430
• Related Public URLs: https://patentscope.wipo.int/search/en/detail.jsf?docId=EP373279120&_cid=P22-L9IBKQ-94542-1