Umamaheswara Vemulapati
Gate-Commutated Thyristor cell with a base region having a varying thickness
Vemulapati, Umamaheswara; Lophitis, Neophytos; Vobecky, Jan; Udrea, Florin; Stiasny, Thomas; Corvasce, Chiara; Antoniou, Marina
Authors
Dr NEO LOPHITIS NEO.LOPHITIS@NOTTINGHAM.AC.UK
Assistant Professor
Jan Vobecky
Florin Udrea
Thomas Stiasny
Chiara Corvasce
Marina Antoniou
Abstract
A power semiconductor device (1) comprises a gate-commutated thyristor cell (20) including a cathode electrode (2), a cathode region (9) of a first conductivity type, a base layer (8) of a second conductivity type, a drift layer (7) of the first conductivity type, an anode layer (5) of the second conductivity type, an anode electrode (3) and a gate electrode (4). The base layer (8) comprises a cathode base region (81) located between the cathode region (9) and the drift layer (7) and having a first depth (D1), a gate base region (82) located between the gate electrode (4) and the drift layer (7) and having a second depth (D2), and an intermediate base region (83) located between the cathode base region (81) and the gate base region (82) and having two different values of a third depth (D3) being between the first depth (D1) and the second depth (D2).
Citation
Vemulapati, U., Lophitis, N., Vobecky, J., Udrea, F., Stiasny, T., Corvasce, C., & Antoniou, M. (2022). Gate-Commutated Thyristor cell with a base region having a varying thickness. EP4053915A1. European Patent Office
Online Publication Date | Sep 7, 2022 |
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Publication Date | Sep 7, 2022 |
Deposit Date | Oct 21, 2022 |
Public URL | https://nottingham-repository.worktribe.com/output/12622430 |
Related Public URLs | https://patentscope.wipo.int/search/en/detail.jsf?docId=EP373279120&_cid=P22-L9IBKQ-94542-1 |
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