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Experimental and physics based study of the Schottky Barrier Height inhomogeneity and associated traps affecting 3C-SiC-on-Si Schottky Barrier Diodes

Arvanitopoulos, Anastasios; Li, Fan; Jennings, Mike R.; Perkins, Samuel; Gyftakis, Konstantinos N.; Mawby, Philip; Antoniou, Marina; Lophitis, Neophytos

Experimental and physics based study of the Schottky Barrier Height inhomogeneity and associated traps affecting 3C-SiC-on-Si Schottky Barrier Diodes Thumbnail


Authors

Anastasios Arvanitopoulos

Fan Li

Mike R. Jennings

Samuel Perkins

Konstantinos N. Gyftakis

Philip Mawby

Marina Antoniou



Abstract

The ability of cubic phase (3C-) Silicon Carbide (SiC) to grow heteroepitaxially on Silicon (Si) substrates (3C-SiC-on-Si) is an enabling feature for cost-effective Wide Bandgap devices and homogeneous integration with Si devices. In this paper, the authors evaluated 3C-SiC-on-Si Schottky Barrier Contacts by fabricating and testing non-freestanding lateral Schottky Barrier Diodes (LSBD). To gain a deep physical insight of the complex carrier transport phenomena that take place in this material, advanced Technology Computer Aided Design (TCAD) models were developed which allowed accurately matching of measurements with simulations. The models incorporate the device geometry, an accurate representation of the bulk material properties, and complex trapping/de-trapping and tunnelling phenomena which appear to affect the device performance. The observed non-uniformities of the Schottky Barrier Height (SBH) were successfully modelled through the incorporation of interfacial traps. The combination of TCAD with fabrication and measurements enabled the identification of trap profiles and pin their influence on the electrical performance of 3C-SiC-on-Si LSBD. The effect of temperature was studied by engaging the identified trap profiles and calculating the occupation distribution of electrons in 3C-SiC at elevated temperature. The investigation constitutes an imperative knowledge step towards the development of devices that take advantage of 3C-SiC material properties.

Citation

Arvanitopoulos, A., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N., Mawby, P., …Lophitis, N. (2021). Experimental and physics based study of the Schottky Barrier Height inhomogeneity and associated traps affecting 3C-SiC-on-Si Schottky Barrier Diodes. IEEE Transactions on Industry Applications, 57(5), 5252-5263. https://doi.org/10.1109/TIA.2021.3087667

Journal Article Type Article
Acceptance Date May 31, 2021
Online Publication Date Jun 8, 2021
Publication Date 2021-09
Deposit Date Jun 16, 2021
Publicly Available Date Mar 28, 2024
Journal IEEE Transactions on Industry Applications
Print ISSN 0093-9994
Electronic ISSN 1939-9367
Publisher Institute of Electrical and Electronics Engineers (IEEE)
Peer Reviewed Peer Reviewed
Volume 57
Issue 5
Pages 5252-5263
DOI https://doi.org/10.1109/TIA.2021.3087667
Keywords Control and Systems Engineering; Electrical and Electronic Engineering; Industrial and Manufacturing Engineering
Public URL https://nottingham-repository.worktribe.com/output/5687900
Publisher URL https://ieeexplore.ieee.org/document/9448386
Additional Information © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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