Anastasios Arvanitopoulos
Experimental and physics based study of the Schottky Barrier Height inhomogeneity and associated traps affecting 3C-SiC-on-Si Schottky Barrier Diodes
Arvanitopoulos, Anastasios; Li, Fan; Jennings, Mike R.; Perkins, Samuel; Gyftakis, Konstantinos N.; Mawby, Philip; Antoniou, Marina; Lophitis, Neophytos
Authors
Fan Li
Mike R. Jennings
Samuel Perkins
Konstantinos N. Gyftakis
Philip Mawby
Marina Antoniou
Dr NEO LOPHITIS NEO.LOPHITIS@NOTTINGHAM.AC.UK
Assistant Professor
Abstract
The ability of cubic phase (3C-) Silicon Carbide (SiC) to grow heteroepitaxially on Silicon (Si) substrates (3C-SiC-on-Si) is an enabling feature for cost-effective Wide Bandgap devices and homogeneous integration with Si devices. In this paper, the authors evaluated 3C-SiC-on-Si Schottky Barrier Contacts by fabricating and testing non-freestanding lateral Schottky Barrier Diodes (LSBD). To gain a deep physical insight of the complex carrier transport phenomena that take place in this material, advanced Technology Computer Aided Design (TCAD) models were developed which allowed accurately matching of measurements with simulations. The models incorporate the device geometry, an accurate representation of the bulk material properties, and complex trapping/de-trapping and tunnelling phenomena which appear to affect the device performance. The observed non-uniformities of the Schottky Barrier Height (SBH) were successfully modelled through the incorporation of interfacial traps. The combination of TCAD with fabrication and measurements enabled the identification of trap profiles and pin their influence on the electrical performance of 3C-SiC-on-Si LSBD. The effect of temperature was studied by engaging the identified trap profiles and calculating the occupation distribution of electrons in 3C-SiC at elevated temperature. The investigation constitutes an imperative knowledge step towards the development of devices that take advantage of 3C-SiC material properties.
Citation
Arvanitopoulos, A., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N., Mawby, P., …Lophitis, N. (2021). Experimental and physics based study of the Schottky Barrier Height inhomogeneity and associated traps affecting 3C-SiC-on-Si Schottky Barrier Diodes. IEEE Transactions on Industry Applications, 57(5), 5252-5263. https://doi.org/10.1109/TIA.2021.3087667
Journal Article Type | Article |
---|---|
Acceptance Date | May 31, 2021 |
Online Publication Date | Jun 8, 2021 |
Publication Date | 2021-09 |
Deposit Date | Jun 16, 2021 |
Publicly Available Date | Mar 28, 2024 |
Journal | IEEE Transactions on Industry Applications |
Print ISSN | 0093-9994 |
Electronic ISSN | 1939-9367 |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Peer Reviewed | Peer Reviewed |
Volume | 57 |
Issue | 5 |
Pages | 5252-5263 |
DOI | https://doi.org/10.1109/TIA.2021.3087667 |
Keywords | Control and Systems Engineering; Electrical and Electronic Engineering; Industrial and Manufacturing Engineering |
Public URL | https://nottingham-repository.worktribe.com/output/5687900 |
Publisher URL | https://ieeexplore.ieee.org/document/9448386 |
Additional Information | © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
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Experimental and physics based study of the Schottky Barrier Height inhomogeneity and associated traps affecting 3C-SiC-on-Si Schottky Barrier Diodes
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