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A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes

Arvanitopoulos, Anastasios E.; Antoniou, Marina; Jennings, Mike R.; Perkins, Samuel; Gyftakis, Konstantinos N.; Mawby, Philip; Lophitis, Neophytos

Authors

Anastasios E. Arvanitopoulos

Marina Antoniou

Mike R. Jennings

Samuel Perkins

Konstantinos N. Gyftakis

Philip Mawby



Abstract

3C-silicon carbide (3C-SiC) Schottky barrier diodes (SBDs) on silicon (Si) substrates (3C-SiC-on-Si) have been found to suffer from excessive subthreshold current, despite the superior electrical properties of 3C-SiC. In turn, that is one of the factors deterring the commercialization of this technology. The forward current-voltage (I-V) characteristics in these devices carry considerable information about the material quality. In this context, an advanced technology computer-aided design (TCAD) model is proposed and validated with measurements obtained from a fabricated and characterized platinum/3C-SiC-on-Si SBD with scope to shed light on the physical carrier transport mechanisms, the impact of traps, and their characteristics on the actual device performance. The model includes defects originating from both the Schottky contact and the heterointerface of 3C-SiC with Si, which allows the investigation of their impact on the magnification of the subthreshold current. Furthermore, the simulation results and measured data allowed for the identification of additional distributions of interfacial states, the effect of which is linked to the observed nonuniformities of the Barrier height value. A comprehensive characterization of the defects affecting the carrier transport mechanisms of the investigated 3C-SiC-on-Si power diode is thus achieved, and the proposed TCAD model is able to accurately predict the device current both during forward and reverse bias conditions.

Journal Article Type Article
Publication Date 2020-03
Journal IEEE Journal of Emerging and Selected Topics in Power Electronics
Print ISSN 2168-6777
Electronic ISSN 2168-6785
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 8
Issue 1
Pages 54-65
APA6 Citation Arvanitopoulos, A. E., Antoniou, M., Jennings, M. R., Perkins, S., Gyftakis, K. N., Mawby, P., & Lophitis, N. (2020). A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8(1), 54-65. https://doi.org/10.1109/JESTPE.2019.2942714
DOI https://doi.org/10.1109/JESTPE.2019.2942714
Publisher URL https://ieeexplore.ieee.org/document/8845679
Additional Information © 2019 IEEE.Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works

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