Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

Antoniou, M.; Lophitis, Neophytis; Bauer, F.; Nistor, I.; Bellini, M.; Rahimo, M.; Amaratunga, G.; Udrea, F.

Abstract

In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed. The superjunction or reduced surface effect proves to be very effective in overcoming the inherited ON-state versus breakdown tradeoff appearing in conventional devices, such as the soft punch through plus or field stop plus (FS+) IGBTs. This design enhances the ON-state performance of the FS+IGBT by increasing the plasma concentration at the cathode side without affecting either the switching performance or the breakdown rating.

Citation

Antoniou, M., Lophitis, N., Bauer, F., Nistor, I., Bellini, M., Rahimo, M., Amaratunga, G., & Udrea, F. (2015). Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors. IEEE Electron Device Letters, 36(8), 823-825. https://doi.org/10.1109/LED.2015.2433894

• Journal Article Type: Article
• Acceptance Date: May 9, 2015
• Online Publication Date: May 15, 2015
• Publication Date: 2015-08
• Deposit Date: Jul 13, 2020
• Journal: IEEE Electron Device Letters
• Print ISSN: 0741-3106
• Electronic ISSN: 1558-0563
• Publisher: Institute of Electrical and Electronics Engineers
• Peer Reviewed: Peer Reviewed
• Volume: 36
• Issue: 8
• Pages: 823-825
• DOI: https://doi.org/10.1109/LED.2015.2433894
• Keywords: insulated gate bipolar transistors, plasma applications, power MOSFET, power bipolar transistors, semiconductor device breakdown, breakdown rating, cathode, local charge compensating layers, plasma enhancement, superjunction power MOSFET, trench-IGBT, tre
• Public URL: https://nottingham-repository.worktribe.com/output/4238034
• Publisher URL: https://ieeexplore.ieee.org/document/7109132