Ioannis Almpanis
Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT
Almpanis, Ioannis; Gammon, Peter; Mawby, Philip; Evans, Paul; Empringham, Lee; Lophitis, Neophytos; Antoniou, Marina; Udrea, Florin
Authors
Peter Gammon
Philip Mawby
PAUL EVANS paul.evans@nottingham.ac.uk
Associate Professor
LEE EMPRINGHAM LEE.EMPRINGHAM@NOTTINGHAM.AC.UK
Professor of Power Conversion Technologies
Dr NEO LOPHITIS NEO.LOPHITIS@NOTTINGHAM.AC.UK
Assistant Professor
Marina Antoniou
Florin Udrea
Abstract
This paper presents a comprehensive short-circuit robustness investigation of 4H- Silicon Carbide (SiC) n-type Insulated Gate Bipolar Transistors (nIGBTs) for Medium-Voltage and High- Voltage applications. Numerical electrothermal TCAD simulations evaluate the IGBT short-circuit behaviour under various conditions and device parameters variation. The internal device current density and temperature distribution show that the parasitic thyristor latch-up and the thermally-assisted leakage current generation can be the failure mechanism of SiC nIGBT when the device temperature in the p-well/n-emitter interface region is about 1500K.
Citation
Almpanis, I., Gammon, P., Mawby, P., Evans, P., Empringham, L., Lophitis, N., …Udrea, F. (2022). Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT. In IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe). https://doi.org/10.1109/WiPDAEurope55971.2022.9936475
Conference Name | IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe 2022) |
---|---|
Conference Location | Coventry, United Kingdom |
Start Date | Sep 18, 2022 |
End Date | Sep 20, 2022 |
Acceptance Date | Jul 1, 2022 |
Online Publication Date | Nov 8, 2022 |
Publication Date | Sep 19, 2022 |
Deposit Date | Sep 5, 2022 |
Publicly Available Date | Mar 28, 2024 |
Publisher | IEEE |
Book Title | IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe) |
ISBN | 9781665488143 |
DOI | https://doi.org/10.1109/WiPDAEurope55971.2022.9936475 |
Keywords | SiC IGBT, short-circuit capability, parasitic thyristor latch-up, electrothermal simulation |
Public URL | https://nottingham-repository.worktribe.com/output/10909073 |
Publisher URL | https://ieeexplore.ieee.org/document/9936475 |
Related Public URLs | https://warwick.ac.uk/fac/sci/eng/wipda2022/ |
Files
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