Skip to main content

Research Repository

Advanced Search

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters

Li, Ke; Evans, Paul Leonard; Johnson, Christopher Mark; Videt, Arnaud; Idir, Nadir

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters Thumbnail


Authors

Ke Li

PAUL EVANS paul.evans@nottingham.ac.uk
Associate Professor

MARK JOHNSON MARK.JOHNSON@NOTTINGHAM.AC.UK
Professor of Advanced Power Conversion

Arnaud Videt

Nadir Idir



Abstract

In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristics, and a behavioural voltage source, which includes multiple RC units to represent different time constants for trapping and detrapping effect from 100 ns to 100 s range. All the required parameters in the model can be obtained by fitting method using a datasheet or experimental characterisation results. The model is then implemented into our developed virtual prototyping software, where the device compact model is co-simulated with a parasitic inductance physical model to obtain the switching waveform. As model order reduction is applied in our software to resolve physical model, the device switching current and voltage waveform can be obtained in the range of minutes. By comparison with experimental measurements, the model is validated to accurately represent device switching transients as well as their spectrum in frequency domain until 100 MHz. In terms of dynamic RDSon value, the mismatch between the model and experimental results is within 10% under different power converter operation conditions in terms of switching frequencies and duty cycles, so designers can use this model to accurately obtain GaN-HEMT power losses due to trapping and detrapping effects for power electronics converters.

Citation

Li, K., Evans, P. L., Johnson, C. M., Videt, A., & Idir, N. (2021). A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters. Energies, 14(8), Article 2092. https://doi.org/10.3390/en14082092

Journal Article Type Article
Acceptance Date Apr 3, 2021
Online Publication Date Apr 9, 2021
Publication Date Apr 9, 2021
Deposit Date Aug 12, 2021
Publicly Available Date Aug 12, 2021
Journal Energies
Electronic ISSN 1996-1073
Publisher MDPI
Peer Reviewed Peer Reviewed
Volume 14
Issue 8
Article Number 2092
DOI https://doi.org/10.3390/en14082092
Public URL https://nottingham-repository.worktribe.com/output/5438434
Publisher URL https://www.mdpi.com/1996-1073/14/8/2092

Files





You might also like



Downloadable Citations