A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field

DiMarino, C.; Mouawad, B.; Skuriat, R.; Li, K.; Xu, Y.; Johnson, C.M.; Boroyevich, D.; Burgos, R.

Abstract

While wide-bandgap devices offer many benefits, they also bring new challenges for designers. In particular, the new 10 kV silicon carbide (SiC) MOSFETs can switch higher voltages faster and with lower losses than silicon devices while also being smaller in size. These features can result in premature dielectric breakdown, higher voltage overshoots, high-frequency current and voltage oscillations, and greater electromagnetic interference. In order to mitigate these side effects and thus fully utilize the benefits of these unique devices, advanced module packaging is needed. This work proposes a power module package with a small footprint (68 mm × 83 mm), low gate- and power-loop inductances (4 nH), increased partial discharge inception voltage (53 %), and reduced common-mode current (90 %).

Citation

DiMarino, C., Mouawad, B., Skuriat, R., Li, K., Xu, Y., Johnson, C., Boroyevich, D., & Burgos, R. (2018, June). A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field. Presented at PCIM 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

• Conference Name: PCIM 2018 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
• Start Date: Jun 5, 2018
• End Date: Jun 7, 2018
• Acceptance Date: Dec 14, 2017
• Publication Date: Jun 5, 2018
• Deposit Date: Aug 7, 2018
• Publicly Available Date: Aug 7, 2018
• Book Title: PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
• ISBN: 978-3-8007-4646-0
• Public URL: https://nottingham-repository.worktribe.com/output/958538
• Publisher URL: https://ieeexplore.ieee.org/document/8402827/
• Additional Information: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
• Contract Date: Aug 7, 2018