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Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT

Almpanis, Ioannis; Gammon, Peter; Mawby, Philip; Evans, Paul; Empringham, Lee; Lophitis, Neophytos; Antoniou, Marina; Udrea, Florin

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Authors

Ioannis Almpanis

Peter Gammon

Philip Mawby

PAUL EVANS paul.evans@nottingham.ac.uk
Associate Professor

Neophytos Lophitis

Marina Antoniou

Florin Udrea



Abstract

This paper presents a comprehensive short-circuit robustness investigation of 4H- Silicon Carbide (SiC) n-type Insulated Gate Bipolar Transistors (nIGBTs) for Medium-Voltage and High- Voltage applications. Numerical electrothermal TCAD simulations evaluate the IGBT short-circuit behaviour under various conditions and device parameters variation. The internal device current density and temperature distribution show that the parasitic thyristor latch-up and the thermally-assisted leakage current generation can be the failure mechanism of SiC nIGBT when the device temperature in the p-well/n-emitter interface region is about 1500K.

Citation

Almpanis, I., Gammon, P., Mawby, P., Evans, P., Empringham, L., Lophitis, N., …Udrea, F. (2022). Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT. In IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe). https://doi.org/10.1109/WiPDAEurope55971.2022.9936475

Presentation Conference Type Edited Proceedings
Conference Name IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe 2022)
Start Date Sep 18, 2022
End Date Sep 20, 2022
Acceptance Date Jul 1, 2022
Online Publication Date Nov 8, 2022
Publication Date Sep 19, 2022
Deposit Date Sep 5, 2022
Publicly Available Date Sep 19, 2022
Publisher Institute of Electrical and Electronics Engineers
Book Title IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe)
ISBN 9781665488143
DOI https://doi.org/10.1109/WiPDAEurope55971.2022.9936475
Keywords SiC IGBT, short-circuit capability, parasitic thyristor latch-up, electrothermal simulation
Public URL https://nottingham-repository.worktribe.com/output/10909073
Publisher URL https://ieeexplore.ieee.org/document/9936475
Related Public URLs https://warwick.ac.uk/fac/sci/eng/wipda2022/

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