Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs

Almpanis, Ioannis; Antoniou, Marina; Evans, Paul; Empringham, Lee; Gammon, Peter; Udrea, Florin; Mawby, Philip; Lophitis, Neophytos

Abstract

Silicon Carbide (SiC) N-channel Insulated Gate Bipolar Transistors (n-IGBTs) rated higher than 10kV can improve Medium Voltage and High Voltage power electronics due to the favourable combination of SiC material with the nIGBT device structure. This paper investigates the phenomenon of unintentional turn-on occurring due to high dV/dt produced during switching transients and analyses the impact of design parameters such as the channel length, the p-well doping and the oxide thickness for their ability to suppress it.

Citation

Almpanis, I., Antoniou, M., Evans, P., Empringham, L., Gammon, P., Udrea, F., Mawby, P., & Lophitis, N. (2022, October). Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs. Presented at 2022 IEEE Energy Conversion Congress and Exposition (ECCE), Detroit, MI, USA

• Presentation Conference Type: Edited Proceedings
• Conference Name: 2022 IEEE Energy Conversion Congress and Exposition (ECCE)
• Start Date: Oct 9, 2022
• End Date: Oct 13, 2022
• Acceptance Date: Aug 9, 2022
• Online Publication Date: Oct 9, 2022
• Publication Date: Oct 9, 2022
• Deposit Date: Sep 5, 2022
• Publicly Available Date: Oct 31, 2022
• Publisher: Institute of Electrical and Electronics Engineers
• Peer Reviewed: Peer Reviewed
• Pages: 3896-3901
• Series ISSN: 2329-3748
• Book Title: 2022 IEEE Energy Conversion Congress and Exposition (ECCE)
• ISBN: 9781728193885
• DOI: https://doi.org/10.1109/ecce50734.2022.9947492
• Keywords: SiC IGBT, unintentional turn-on, coupling noise
• Public URL: https://nottingham-repository.worktribe.com/output/10909127
• Publisher URL: https://ieeexplore.ieee.org/document/9947492
• Related Public URLs: https://www.ieee-ecce.org/2022/