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Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations

Arvanitopoulos, A.; Antoniou, M.; Li, F.; Jennings, M.R.; Perkins, S.; Gyftakis, K.N.; Lophitis, N.

Authors

A. Arvanitopoulos

M. Antoniou

F. Li

M.R. Jennings

S. Perkins

K.N. Gyftakis



Abstract

The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Nonetheless, material related limitations originate from the advantageous fact that 3C-SiC can be grown on Silicon (Si) wafers. One of these major limitations is an almost negligible activation of the p-type dopants after ion implantation because the annealing has to take place at relatively low temperatures. In this paper, a novel process flow for a vertical 3C-SiC-on-Si MOSFET is presentedto overcome the difficulties that currently exist in obtaining a p-body region through implantation. The proposed design has been accurately simulated with Technology Computer Aided Design (TCAD) process and device software and a comparison is performed with the conventional SiC MOSFET design. Thesimulated output characteristics demonstrated a reduced onresistance and at the same time it is shown that the blocking capability can be maintained to the same level. The promising performance of the novel design discussed in this paper ispotentially the solution needed and a huge step towards the realisation of 3C-SiC-on-Si MOSFETs with commercially grated characteristics.

Start Date Aug 27, 2019
Publication Date Aug 27, 2019
Publisher Institute of Electrical and Electronics Engineers
Pages 364 -370
Book Title Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED)
ISBN 9781728118321
APA6 Citation Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M., Perkins, S., Gyftakis, K., & Lophitis, N. (2019). Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations. In Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED). , (364 -370). https://doi.org/10.1109/DEMPED.2019.8864910
DOI https://doi.org/10.1109/DEMPED.2019.8864910
Keywords 3C-SiC-on-Si, MOSFETs, SRIM, Silicon Carbide, TCAD, Wide Band Gap
Publisher URL https://ieeexplore.ieee.org/document/8864910
Additional Information © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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