Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations

Arvanitopoulos, A.; Antoniou, M.; Li, F.; Jennings, M. R.; Perkins, S.; Gyftakis, K. N.; Lophitis, N.

Abstract

The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Nonetheless, material related limitations originate from the advantageous fact that 3C-SiC can be grown on Silicon (Si) wafers. One of these major limitations is an almost negligible activation of the p-type dopants after ion implantation because the annealing has to take place at relatively low temperatures. In this paper, a novel process flow for a vertical 3C-SiC-on-Si MOSFET is presentedto overcome the difficulties that currently exist in obtaining a p-body region through implantation. The proposed design has been accurately simulated with Technology Computer Aided Design (TCAD) process and device software and a comparison is performed with the conventional SiC MOSFET design. Thesimulated output characteristics demonstrated a reduced onresistance and at the same time it is shown that the blocking capability can be maintained to the same level. The promising performance of the novel design discussed in this paper ispotentially the solution needed and a huge step towards the realisation of 3C-SiC-on-Si MOSFETs with commercially grated characteristics.

Citation

Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N., & Lophitis, N. (2019). Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations. In Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED) (364 -370). https://doi.org/10.1109/DEMPED.2019.8864910

• Conference Name: 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED)
• Conference Location: Toulouse, France
• Start Date: Aug 27, 2019
• End Date: Aug 30, 2019
• Acceptance Date: Apr 28, 2019
• Online Publication Date: Oct 14, 2019
• Publication Date: 2019-08
• Deposit Date: May 5, 2020
• Publicly Available Date: May 14, 2020
• Publisher: Institute of Electrical and Electronics Engineers
• Pages: 364 -370
• Book Title: Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED)
• ISBN: 978-1-7281-1833-8
• DOI: https://doi.org/10.1109/DEMPED.2019.8864910
• Keywords: 3C-SiC-on-Si, MOSFETs, SRIM, Silicon Carbide, TCAD, Wide Band Gap
• Public URL: https://nottingham-repository.worktribe.com/output/4238116
• Publisher URL: https://ieeexplore.ieee.org/document/8864910
• Additional Information: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.