Marina Antoniou
The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area
Antoniou, Marina; Lophitis, Neophytos; Udrea, Florin; Corvasce, Chiara; De-Michielis, Luca
Authors
Neophytos Lophitis
Florin Udrea
Chiara Corvasce
Luca De-Michielis
Abstract
© 2020 IEEE. A novel Trench IGBT design, namely the p-ring Trench Schottky IGBT, with improved latch-up immunity and an enhanced safe-operating area is proposed. This design improves the performance of the FS+ IGBT by facilitating the collection of holes through a p-doped (p-ring) buried region connected through a Schottky contact to the source/cathode contact. This unique structure approach allows the improvement in the device reliability and it is shown under numerical studies to be highly effective in expanding the safe operating area (SOA), suppress dynamic avalanche, improve the latch up robustness and have the potential to improve the device switching operation.
Citation
Antoniou, M., Lophitis, N., Udrea, F., Corvasce, C., & De-Michielis, L. (2020, September). The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area. Presented at 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria
Presentation Conference Type | Edited Proceedings |
---|---|
Conference Name | 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
Start Date | Sep 13, 2020 |
End Date | Sep 18, 2020 |
Acceptance Date | Jan 20, 2020 |
Online Publication Date | Aug 18, 2020 |
Publication Date | 2020-09 |
Deposit Date | Apr 24, 2020 |
Publicly Available Date | Aug 18, 2020 |
Publisher | Institute of Electrical and Electronics Engineers |
Volume | 2020-September |
Pages | 134-137 |
Series ISSN | 1946-0201 |
Book Title | Proceedings - 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
ISBN | 978-1-7281-4837-3 |
DOI | https://doi.org/10.1109/ISPSD46842.2020.9170084 |
Public URL | https://nottingham-repository.worktribe.com/output/4332261 |
Publisher URL | https://ieeexplore.ieee.org/document/9170084 |
Related Public URLs | https://www.ispsd2020.com/ |
Additional Information | © 2020 IEEE.Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
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Antoniou Et Al. - 2020 - The P-ring Trench Schottky IGBT A Solution Towards Latch-up Immunity And An Enhanced Safe-operating Area
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