The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area
Antoniou, Marina; Lophitis, Neophytos; Udrea, Florin; Covarce, Chiara; De-Michielis, Luca
Dr NEO LOPHITIS Neo.Lophitis@nottingham.ac.uk
A novel Trench IGBT design, namely the p-ring Trench Schottky IGBT, with improved latch-up immunity and an enhanced safe-operating area is proposed. This design improves the performance of the FS+ IGBT by facilitating the collection of holes through a p-doped (p-ring) buried region connected through a Schottky contact to the source/cathode contact. This unique structure approach allows the improvement in the device reliability and it is shown under numerical studies to be highly effective in expanding the safe operating area (SOA), suppress dynamic avalanche, improving the latch up robustness and having the potential to improve the device switching operation.
|Start Date||Sep 3, 2020|
|Publisher||Institute of Electrical and Electronics Engineers|
|APA6 Citation||Antoniou, M., Lophitis, N., Udrea, F., Covarce, C., & De-Michielis, L. (in press). The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area|
|Related Public URLs||https://www.ispsd2020.com/|
This file is under embargo due to copyright reasons.
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