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New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop

Lophitis, N.; Antoniou, M.; Vemulapati, U.; Arnold, M.; Nistor, I.; Vobecky, J.; Rahimo, M.; Udrea, F.

New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop Thumbnail


Authors

M. Antoniou

U. Vemulapati

M. Arnold

I. Nistor

J. Vobecky

M. Rahimo

F. Udrea



Abstract

© 2016 IEEE. A new design approach for bi-mode gatecommutated thyristors (BGCTs) is proposed for high-current controllability and low ON-state voltage drop. Using a complex multi-cell mixed-mode simulation model which can capture the maximum controllable current (MCC) of large area devices, a failure analysis was performed to demonstrate that the new design concept can increase the MCC by about 27% at room temperature and by about 17% at 400 K while minimizing the ON-state voltage drop. The simulations depict that the improvement comes from the new approach to terminate the GCT part in the BGCT way of intertwining GCT and diode regions for reverse conducting operation.

Citation

Lophitis, N., Antoniou, M., Vemulapati, U., Arnold, M., Nistor, I., Vobecky, J., …Udrea, F. (2016). New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop. IEEE Electron Device Letters, 37(4), 467-470. https://doi.org/10.1109/led.2016.2533572

Journal Article Type Article
Acceptance Date Mar 22, 2015
Online Publication Date Feb 24, 2016
Publication Date 2016-04
Deposit Date Apr 24, 2020
Publicly Available Date Mar 28, 2024
Journal IEEE Electron Device Letters
Print ISSN 0741-3106
Electronic ISSN 1558-0563
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 37
Issue 4
Pages 467-470
DOI https://doi.org/10.1109/led.2016.2533572
Public URL https://nottingham-repository.worktribe.com/output/3706466
Publisher URL https://ieeexplore.ieee.org/document/7416634
Additional Information © 2016 IEEE.Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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