Dr NEO LOPHITIS NEO.LOPHITIS@NOTTINGHAM.AC.UK
Assistant Professor
New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop
Lophitis, N.; Antoniou, M.; Vemulapati, U.; Arnold, M.; Nistor, I.; Vobecky, J.; Rahimo, M.; Udrea, F.
Authors
M. Antoniou
U. Vemulapati
M. Arnold
I. Nistor
J. Vobecky
M. Rahimo
F. Udrea
Abstract
© 2016 IEEE. A new design approach for bi-mode gatecommutated thyristors (BGCTs) is proposed for high-current controllability and low ON-state voltage drop. Using a complex multi-cell mixed-mode simulation model which can capture the maximum controllable current (MCC) of large area devices, a failure analysis was performed to demonstrate that the new design concept can increase the MCC by about 27% at room temperature and by about 17% at 400 K while minimizing the ON-state voltage drop. The simulations depict that the improvement comes from the new approach to terminate the GCT part in the BGCT way of intertwining GCT and diode regions for reverse conducting operation.
Citation
Lophitis, N., Antoniou, M., Vemulapati, U., Arnold, M., Nistor, I., Vobecky, J., …Udrea, F. (2016). New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop. IEEE Electron Device Letters, 37(4), 467-470. https://doi.org/10.1109/led.2016.2533572
Journal Article Type | Article |
---|---|
Acceptance Date | Mar 22, 2015 |
Online Publication Date | Feb 24, 2016 |
Publication Date | 2016-04 |
Deposit Date | Apr 24, 2020 |
Publicly Available Date | Mar 28, 2024 |
Journal | IEEE Electron Device Letters |
Print ISSN | 0741-3106 |
Electronic ISSN | 1558-0563 |
Publisher | Institute of Electrical and Electronics Engineers |
Peer Reviewed | Peer Reviewed |
Volume | 37 |
Issue | 4 |
Pages | 467-470 |
DOI | https://doi.org/10.1109/led.2016.2533572 |
Public URL | https://nottingham-repository.worktribe.com/output/3706466 |
Publisher URL | https://ieeexplore.ieee.org/document/7416634 |
Additional Information | © 2016 IEEE.Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
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Lophitis Et Al. - 2016 - New Bi-Mode Gate-Commutated Thyristor Design Concept For High-Current Controllability And Low ON-State Voltage
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