Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design
(2023)
Conference Proceeding
This paper aims to investigate the current imbalance within parallel connected common-source configuration of SiC Power MOSFET switches using double pulse transient operation. Mismatches in electro-thermal parameters e.g., threshold voltage (Vth and... Read More about Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design.