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Transient out-of-SOA robustness of SiC power MOSFETs

Castellazzi, Alberto; Fayyaz, Asad; Romano, Gianpaolo; Riccio, Michele; Irace, Andrea; Urresti-Ibanez, Jesus; Wright, Nick

Authors

Alberto Castellazzi alberto.castellazzi@nottingham.ac.uk

Gianpaolo Romano

Michele Riccio

Andrea Irace

Jesus Urresti-Ibanez

Nick Wright



Abstract

Beyond their main function of high-frequency switches in modulated power converters, solid-state power devices are required in many application domains to also ensure robustness against a number of overload operational conditions. This paper considers the specific case of 1200 V SiC power MOSFETs and analyses their performance under three main transient regimes at the edge of and out of their Safe Operating Area: unclamped inductive switching led avalanche breakdown; short-circuit; operation as current limiting and regulating devices. The results presented highlight both inherent major strengths of SiC over Si and areas for improvement by tailored device design. The paper aims to contribute useful indications for technology development in future device generations to better match widespread and varied application requirements.

Citation

Castellazzi, A., Fayyaz, A., Romano, G., Riccio, M., Irace, A., Urresti-Ibanez, J., & Wright, N. (2017). Transient out-of-SOA robustness of SiC power MOSFETs

Conference Name 2017 IEEE International Reliability Physics Symposium (IRPS 2017)
End Date Apr 6, 2017
Acceptance Date Mar 17, 2017
Online Publication Date Jun 1, 2017
Publication Date Apr 4, 2017
Deposit Date Sep 21, 2017
Publicly Available Date Sep 21, 2017
Peer Reviewed Peer Reviewed
Keywords Power MOSFET, Robustness, Semiconductor Device Reliability, Silicon Carbide, Wide Band Gap Semiconductors
Public URL http://eprints.nottingham.ac.uk/id/eprint/46554
Publisher URL http://ieeexplore.ieee.org/document/7936255/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf
Additional Information © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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