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VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

Asllani, Besar; Fayyaz, Asad; Castellazzi, Alberto; Morel, Herv�; Planson, Dominique

VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs Thumbnail


Authors

Besar Asllani

ASAD FAYYAZ ASAD.FAYYAZ@NOTTINGHAM.AC.UK
Senior Research Fellow

Alberto Castellazzi

Herv� Morel

Dominique Planson



Abstract

VTH subthreshold hysteresis measured in commercially available 4H-SiC MOSFET is more pronounced in trench than in planar ones. All planar devices from different manufacturers exhibit an inverse temperature dependence, with the hysteresis amplitude reducing as the temperature increases, whereas all trench devices from different manufacturers exhibit the opposite behaviour. A physical interpretation is proposed, based on experimental evidence, which demonstrates that temperature dependence of the VTH subthreshold hysteresis is related to the technology. The findings are relevant to the ongoing discussion on SiC bespoke validation standards development and contribute important new insight.

Journal Article Type Article
Acceptance Date Jun 25, 2018
Online Publication Date Sep 30, 2018
Publication Date Sep 30, 2018
Deposit Date Dec 12, 2018
Publicly Available Date Oct 1, 2019
Journal Microelectronics Reliability
Print ISSN 0026-2714
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 88-90
Pages 604-609
DOI https://doi.org/10.1016/j.microrel.2018.06.047
Public URL https://nottingham-repository.worktribe.com/output/1062799
Publisher URL https://www.sciencedirect.com/science/article/pii/S0026271418304633?via%3Dihub

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