VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

Asllani, Besar; Fayyaz, Asad; Castellazzi, Alberto; Morel, Herv�; Planson, Dominique

Abstract

VTH subthreshold hysteresis measured in commercially available 4H-SiC MOSFET is more pronounced in trench than in planar ones. All planar devices from different manufacturers exhibit an inverse temperature dependence, with the hysteresis amplitude reducing as the temperature increases, whereas all trench devices from different manufacturers exhibit the opposite behaviour. A physical interpretation is proposed, based on experimental evidence, which demonstrates that temperature dependence of the VTH subthreshold hysteresis is related to the technology. The findings are relevant to the ongoing discussion on SiC bespoke validation standards development and contribute important new insight.

Citation

Asllani, B., Fayyaz, A., Castellazzi, A., Morel, H., & Planson, D. (2018). VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectronics Reliability, 88-90, 604-609. https://doi.org/10.1016/j.microrel.2018.06.047

• Journal Article Type: Article
• Acceptance Date: Jun 25, 2018
• Online Publication Date: Sep 30, 2018
• Publication Date: Sep 30, 2018
• Deposit Date: Dec 12, 2018
• Publicly Available Date: Oct 1, 2019
• Journal: Microelectronics Reliability
• Print ISSN: 0026-2714
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 88-90
• Pages: 604-609
• DOI: https://doi.org/10.1016/j.microrel.2018.06.047
• Public URL: https://nottingham-repository.worktribe.com/output/1062799
• Publisher URL: https://www.sciencedirect.com/science/article/pii/S0026271418304633?via%3Dihub