Han Wu
P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness
Wu, Han; Fayyaz, Asad; Castellazzi, Alberto
Abstract
This paper proposes the design and prototype development and testing of a gate-driver which enables to jointly optimize the performance in application of gate-injection type high electron mobility transistors, taking into account a number of diverse operational conditions, including nominal and abnormal events. The results show that it is possible to optimize the gate-driver parameters in such a way as to ensure optimum switching and free-wheeling performance, while ensuring enhanced short-circuit robustness.
Citation
Wu, H., Fayyaz, A., & Castellazzi, A. (2018, May). P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness. Presented at 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, USA
Presentation Conference Type | Edited Proceedings |
---|---|
Conference Name | 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
Start Date | May 13, 2018 |
End Date | May 17, 2018 |
Acceptance Date | Dec 22, 2017 |
Online Publication Date | Jun 25, 2018 |
Publication Date | Jun 25, 2018 |
Deposit Date | Aug 14, 2018 |
Publicly Available Date | Aug 15, 2018 |
Pages | 232-235 |
Series ISSN | 1946-0201 |
Book Title | Proceedings of the 30th International Symposium on Power Semiconductor Devices and ICs, 13-17 May 2018, Chicago, USA |
Chapter Number | NA |
ISBN | 978-1-5386-2928-4 |
DOI | https://doi.org/10.1109/ISPSD.2018.8393645 |
Keywords | GaN HEMTs; GaN GITs; gate-drivers; wide-bandgap semiconductors. |
Public URL | https://nottingham-repository.worktribe.com/output/1032736 |
Publisher URL | https://ieeexplore.ieee.org/document/8393645/ |
Additional Information | © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
Contract Date | Aug 14, 2018 |
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P-gate GaN HEMT Gate-driver Design For Joint Optimization Of Switching Performance, Freewheeling Conduction And Short-circuit Robustness
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