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SiC MOSFET device parameter spread and ruggedness of parallel multichip structures

Castellazzi, Alberto; Fayyaz, Asad; Kraus, Rainer

Authors

Alberto Castellazzi

Rainer Kraus



Abstract

This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mrated commercial devices. Some major parameters are identified and selected, presenting experimental evidence of their impact during transient overload events. An advanced physics-based simulation model is then employed to extend the analysis to a more comprehensive set of parameters and operational conditions.

Citation

Castellazzi, A., Fayyaz, A., & Kraus, R. (2018). SiC MOSFET device parameter spread and ruggedness of parallel multichip structures. Materials Science Forum, 924, (811-817). doi:10.4028/www.scientific.net/msf.924.811. ISSN 0255-5476

Journal Article Type Article
Acceptance Date Mar 8, 2018
Online Publication Date Jun 1, 2018
Publication Date Jun 1, 2018
Deposit Date Aug 14, 2018
Journal Materials Science Forum
Print ISSN 0255-5476
Electronic ISSN 1662-9752
Publisher Trans Tech Publications
Peer Reviewed Peer Reviewed
Volume 924
Pages 811-817
DOI https://doi.org/10.4028/www.scientific.net/msf.924.811
Publisher URL https://www.scientific.net/MSF.924.811
Related Public URLs https://www.scientific.net/MSF