SiC MOSFET device parameter spread and ruggedness of parallel multichip structures

Castellazzi, Alberto; Fayyaz, Asad; Kraus, Rainer

Abstract

This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mΩ rated commercial devices. Some major parameters are identified and selected, presenting experimental evidence of their impact during transient overload events. An advanced physics-based simulation model is then employed to extend the analysis to a more comprehensive set of parameters and operational conditions.

Citation

Castellazzi, A., Fayyaz, A., & Kraus, R. (2018). SiC MOSFET device parameter spread and ruggedness of parallel multichip structures. Materials Science Forum, 924, (811-817). doi:10.4028/www.scientific.net/msf.924.811. ISSN 0255-5476

• Journal Article Type: Article
• Acceptance Date: Mar 8, 2018
• Online Publication Date: Jun 1, 2018
• Publication Date: Jun 1, 2018
• Deposit Date: Aug 14, 2018
• Journal: Materials Science Forum
• Print ISSN: 0255-5476
• Electronic ISSN: 1662-9752
• Publisher: Trans Tech Publications
• Peer Reviewed: Peer Reviewed
• Volume: 924
• Pages: 811-817
• DOI: https://doi.org/10.4028/www.scientific.net/msf.924.811
• Publisher URL: https://www.scientific.net/MSF.924.811
• Related Public URLs: https://www.scientific.net/MSF