M. Riccio
Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module
Riccio, M.; Borghese, A.; Romano, G.; D 'alessandro, V.; Fayyaz, A.; Castellazzi, A.; Maresca, L.; Breglio, G.; Irace, A.
Authors
A. Borghese
G. Romano
V. D 'alessandro
Dr ASAD FAYYAZ ASAD.FAYYAZ@NOTTINGHAM.AC.UK
SENIOR RESEARCH FELLOW
A. Castellazzi
L. Maresca
G. Breglio
A. Irace
Abstract
In this contribution, a previously developed temperature-dependent SPICE model for SiC power MOSFETs is calibrated on experimental data of commercially available devices. Thereafter, its features are exploited for dynamic ET simulations of paralleled devices for multichip power module application. Finally, Monte Carlo ET simulations of paralleled devices during switching condition are used to evaluate the expected impact of statistical variation of device and circuit parameters on current sharing and on dissipated switching energy unbalance.
Citation
Riccio, M., Borghese, A., Romano, G., D 'alessandro, V., Fayyaz, A., Castellazzi, A., Maresca, L., Breglio, G., & Irace, A. (2018, September). Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module. Presented at 20th European Conference on Power Electronics and Applications (EPE 18 ECCE Europe), Riga, Latvia
Presentation Conference Type | Conference Paper (published) |
---|---|
Conference Name | 20th European Conference on Power Electronics and Applications (EPE 18 ECCE Europe) |
Start Date | Sep 17, 2018 |
End Date | Sep 21, 2018 |
Acceptance Date | Jul 17, 2018 |
Online Publication Date | Nov 1, 2018 |
Publication Date | Sep 18, 2018 |
Deposit Date | Feb 19, 2019 |
Publicly Available Date | Feb 19, 2019 |
Publisher | Institute of Electrical and Electronics Engineers |
Book Title | Power Electronics and Applications (EPE'18 ECCE Europe), 2018 20th European Conference |
Public URL | https://nottingham-repository.worktribe.com/output/1567038 |
Publisher URL | https://ieeexplore.ieee.org/document/8515352 |
Additional Information | © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
Contract Date | Feb 19, 2019 |
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Analysis Of Device And Circuit Parameters Variability In SiC MOSFETs-Based Multichip Power Module
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