Skip to main content

Research Repository

Advanced Search

Effect of parameters variability on the performance of SiC MOSFET modules

Borghese, Alessandro; Riccio, Michele; Breglio, Giovanni; Fayyaz, Asad; Castellazzi, Alberto; Irace, Andrea; Marese, Luca


Alessandro Borghese

Michele Riccio

Giovanni Breglio

Alberto Castellazzi

Andrea Irace

Luca Marese


This paper introduces a statistical analysis of the impact of devices parameters dispersion on the performances of parallel connected SiC MOSFETs. To this purpose, the statistical fluctuations of threshold voltage and current factor are evaluated on a set of 20 MOSFETs. In order to assess the effects of parameters spread in a real operating condition, the electrothermal simulation of a 200kHz synchronous buck converter is performed. Subsequently, an investigation of the switching energy unbalance, as a function of parameters distribution tolerances, is achieved through several sets of Monte Carlo electrothermal simulations. The results aim at aiding both the design of multi-chip configurations and the selection of appropriate fabrication process rejection boundaries.


Borghese, A., Riccio, M., Breglio, G., Fayyaz, A., Castellazzi, A., Irace, A., & Marese, L. (2018). Effect of parameters variability on the performance of SiC MOSFET modules. doi:10.1109/ESARS-ITEC.2018.8607593

Conference Name 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC)
Start Date Nov 7, 2018
End Date Nov 9, 2018
Acceptance Date Jul 26, 2018
Online Publication Date Jan 14, 2019
Publication Date Nov 9, 2018
Deposit Date Oct 26, 2018
Publicly Available Date Oct 26, 2018
Publisher Institute of Electrical and Electronics Engineers
Keywords MOSFET , Silicon carbide , Integrated circuit modeling , Switches , Semiconductor device modeling , Performance evaluation , Reliability
Public URL
Publisher URL
Related Public URLs
Additional Information © 2018 EEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.


Effect Of Parameters Variability On The Performance Of SiC MOSFET Modules (755 Kb)

You might also like

Downloadable Citations