Dr ASAD FAYYAZ ASAD.FAYYAZ@NOTTINGHAM.AC.UK
SENIOR RESEARCH FELLOW
Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs
Fayyaz, A.; Yang, L.; Riccio, M.; Castellazzi, A.; Irace, A.
Authors
L. Yang
M. Riccio
A. Castellazzi
A. Irace
Abstract
This paper presents an extensive electro-thermal characterisation of latest generation silicon carbide (SiC) Power MOSFETs under unclamped inductive switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche ruggedness limits of commercial SiC MOSFETs and assess their aging under repetitive stress conditions. Both a functional and a structural characterisation of the transistors is presented, with the aim of informing future device technology development for robust and reliable power system development.
Citation
Fayyaz, A., Yang, L., Riccio, M., Castellazzi, A., & Irace, A. (2014). Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectronics Reliability, 54(9-10), 2185-2190. https://doi.org/10.1016/j.microrel.2014.07.078
Journal Article Type | Article |
---|---|
Acceptance Date | Jul 8, 2014 |
Online Publication Date | Sep 16, 2014 |
Publication Date | 2014-09 |
Deposit Date | Aug 3, 2016 |
Publicly Available Date | Aug 3, 2016 |
Journal | Microelectronics Reliability |
Print ISSN | 0026-2714 |
Electronic ISSN | 0026-2714 |
Publisher | Elsevier |
Peer Reviewed | Peer Reviewed |
Volume | 54 |
Issue | 9-10 |
Pages | 2185-2190 |
DOI | https://doi.org/10.1016/j.microrel.2014.07.078 |
Keywords | SiC; Power MOSFETs; Wide bandgap; Device characterisation; Reliability; Robustness |
Public URL | https://nottingham-repository.worktribe.com/output/734690 |
Publisher URL | http://www.sciencedirect.com/science/article/pii/S0026271414002741 |
Additional Information | This article is maintained by: Elsevier; Article Title: Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs; Journal Title: Microelectronics Reliability; CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.microrel.2014.07.078; Content Type: article; Copyright: Copyright © 2014 Elsevier Ltd. All rights reserved. |
Contract Date | Aug 3, 2016 |
Files
Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs.pdf
(553 Kb)
PDF
Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nc-nd/4.0
You might also like
Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design
(2023)
Presentation / Conference Contribution
Design Considerations for High-Voltage High-Current Bi-Directional DC Solid-State Circuit Breaker (SSCB) for Aerospace Applications
(2021)
Presentation / Conference Contribution
SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation
(2019)
Presentation / Conference Contribution
Effect of Parameters Variability on the Performance of SiC MOSFET Modules
(2018)
Presentation / Conference Contribution
Downloadable Citations
About Repository@Nottingham
Administrator e-mail: discovery-access-systems@nottingham.ac.uk
This application uses the following open-source libraries:
SheetJS Community Edition
Apache License Version 2.0 (http://www.apache.org/licenses/)
PDF.js
Apache License Version 2.0 (http://www.apache.org/licenses/)
Font Awesome
SIL OFL 1.1 (http://scripts.sil.org/OFL)
MIT License (http://opensource.org/licenses/mit-license.html)
CC BY 3.0 ( http://creativecommons.org/licenses/by/3.0/)
Powered by Worktribe © 2025
Advanced Search