Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design

Fayyaz, Asad; Li, Ying; Evans, Paul; Watson, Alan; Wheeler, Pat; Gerada, Chris

Abstract

This paper aims to investigate the current imbalance within parallel connected common-source configuration of SiC Power MOSFET switches using double pulse transient operation. Mismatches in electro-thermal parameters e.g., threshold voltage (Vth and uneven unintentional PCB parasitic inductances can result in uneven current sharing during the transient operation. The tests presented here were carried out using 3rd generation 650 V, 49 A-45 mΩ discrete SiC power MOSFET devices connected in parallel which is representative of a mutli-chip power module architecture. Moreover, theoretical analysis presented here also demonstrates how parasitic inductances in different locations within the commutation loop will have different effects on transient current sharing.

• Conference Name: WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
• Conference Location: Hsinchu, Taiwan
• Start Date: Aug 27, 2023
• End Date: Aug 29, 2023
• Acceptance Date: Aug 27, 2023
• Online Publication Date: Sep 27, 2023
• Publication Date: Sep 27, 2023
• Deposit Date: May 21, 2024
• Publisher: Institute of Electrical and Electronics Engineers
• Series ISSN: 2831-3712
• Book Title: 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
• ISBN: 979-8-3503-3712-9
• DOI: https://doi.org/10.1109/WiPDAAsia58218.2023.10261906
• Public URL: https://nottingham-repository.worktribe.com/output/25953424
• Publisher URL: https://ieeexplore.ieee.org/document/10261906