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SiC power MOSFETs threshold-voltage hysteresis and its impact on short circuit operation

Asllani, Besar; Morel, Herve; Planson, Dominique; Fayyaz, Asad; Castellazzi, Alberto


Besar Asllani

Herve Morel

Dominique Planson

Alberto Castellazzi


V TH subthreshold hysteresis is an aspect of MOSFET's threshold instabilities that is gaining interests in last few years. As a matter of fact, reliability concerns are raised due to the fluctuation of the threshold voltage depending on the previous bias state. The subthreshold drain current, also called drain leakage current, is enhanced after a negative gate bias is applied to put the device in OFF-state. This phenomenon affects the static characteristics and might also change the dynamic behaviour of the devices, but such measurements have not yet been reported. This study reports the impact of the Hysteresis on the Short Circuit behaviour of a commercially available SiC MOSFET. A physical interpretation of the measurement is given in order to provide the fundamentals necessary for the evaluation of the reliability of these power devices.

Start Date Nov 7, 2018
Publication Date Nov 9, 2018
Publisher Institute of Electrical and Electronics Engineers
APA6 Citation Asllani, B., Morel, H., Planson, D., Fayyaz, A., & Castellazzi, A. (2018). SiC power MOSFETs threshold-voltage hysteresis and its impact on short circuit operation. doi:10.1109/esars-itec.2018.8607547
Keywords VTH Hysteresis; VTH instabillities; Short Circuit; SiC MOSFET; Reliability
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SiC Power MOSFETs Threshold-voltage Hysteresis And Its Impact On Short Circuit Operation (983 Kb)

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