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SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

Asllani, Besar; Morel, Herve; Planson, Dominique; Fayyaz, Asad; Castellazzi, Alberto


Besar Asllani

Herve Morel

Dominique Planson

Alberto Castellazzi


V TH subthreshold hysteresis is an aspect of MOSFET's threshold instabilities that is gaining interests in last few years. As a matter of fact, reliability concerns are raised due to the fluctuation of the threshold voltage depending on the previous bias state. The subthreshold drain current, also called drain leakage current, is enhanced after a negative gate bias is applied to put the device in OFF-state. This phenomenon affects the static characteristics and might also change the dynamic behaviour of the devices, but such measurements have not yet been reported. This study reports the impact of the Hysteresis on the Short Circuit behaviour of a commercially available SiC MOSFET. A physical interpretation of the measurement is given in order to provide the fundamentals necessary for the evaluation of the reliability of these power devices.


Asllani, B., Morel, H., Planson, D., Fayyaz, A., & Castellazzi, A. (2019). SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation.

Conference Name 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC)
Conference Location Nottingham, UK
Start Date Nov 7, 2018
End Date Nov 9, 2018
Acceptance Date Jul 26, 2018
Online Publication Date Jan 14, 2019
Publication Date Jan 9, 2019
Deposit Date Feb 21, 2019
Publicly Available Date Mar 1, 2019
Publisher Institute of Electrical and Electronics Engineers
Keywords VTH Hysteresis; VTH instabillities; Short Circuit; SiC MOSFET; Reliability
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