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Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs

Fayyaz, A.; Yang, L.; Riccio, M.; Castellazzi, A.; Irace, A.

Authors

A. Fayyaz

L. Yang

M. Riccio

A. Castellazzi

A. Irace



Abstract

This paper presents an extensive electro-thermal characterisation of latest generation silicon carbide (SiC) Power MOSFETs under unclamped inductive switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche ruggedness limits of commercial SiC MOSFETs and assess their aging under repetitive stress conditions. Both a functional and a structural characterisation of the transistors is presented, with the aim of informing future device technology development for robust and reliable power system development.

Journal Article Type Article
Publication Date 2014-09
Journal Microelectronics Reliability
Print ISSN 0026-2714
Electronic ISSN 0026-2714
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 54
Issue 9-10
Pages 2185-2190
APA6 Citation Fayyaz, A., Yang, L., Riccio, M., Castellazzi, A., & Irace, A. (2014). Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectronics Reliability, 54(9-10), 2185-2190. https://doi.org/10.1016/j.microrel.2014.07.078
DOI https://doi.org/10.1016/j.microrel.2014.07.078
Keywords SiC; Power MOSFETs; Wide bandgap; Device characterisation;
Reliability; Robustness
Publisher URL http://www.sciencedirect.com/science/article/pii/S0026271414002741
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nc-nd/4.0
Additional Information This article is maintained by: Elsevier; Article Title: Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs; Journal Title: Microelectronics Reliability; CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.microrel.2014.07.078; Content Type: article; Copyright: Copyright © 2014 Elsevier Ltd. All rights reserved.

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nc-nd/4.0





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