Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs

Fayyaz, A.; Yang, L.; Riccio, M.; Castellazzi, A.; Irace, A.

Abstract

This paper presents an extensive electro-thermal characterisation of latest generation silicon carbide (SiC) Power MOSFETs under unclamped inductive switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche ruggedness limits of commercial SiC MOSFETs and assess their aging under repetitive stress conditions. Both a functional and a structural characterisation of the transistors is presented, with the aim of informing future device technology development for robust and reliable power system development.

Citation

Fayyaz, A., Yang, L., Riccio, M., Castellazzi, A., & Irace, A. (2014). Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectronics Reliability, 54(9-10), 2185-2190. https://doi.org/10.1016/j.microrel.2014.07.078

• Journal Article Type: Article
• Acceptance Date: Jul 8, 2014
• Online Publication Date: Sep 16, 2014
• Publication Date: 2014-09
• Deposit Date: Aug 3, 2016
• Publicly Available Date: Aug 3, 2016
• Journal: Microelectronics Reliability
• Print ISSN: 0026-2714
• Electronic ISSN: 0026-2714
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 54
• Issue: 9-10
• Pages: 2185-2190
• DOI: https://doi.org/10.1016/j.microrel.2014.07.078
• Keywords: SiC; Power MOSFETs; Wide bandgap; Device characterisation; ; Reliability; Robustness
• Public URL: https://nottingham-repository.worktribe.com/output/734690
• Publisher URL: http://www.sciencedirect.com/science/article/pii/S0026271414002741
• Additional Information: This article is maintained by: Elsevier; Article Title: Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs; Journal Title: Microelectronics Reliability; CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.microrel.2014.07.078; Content Type: article; Copyright: Copyright © 2014 Elsevier Ltd. All rights reserved.