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High temperature pulsed-gate robustness testing of SiC power MOSFETs

Fayyaz, A.; Castellazzi, A.

Authors

A. Castellazzi



Abstract

© 2015 Elsevier Ltd. Silicon Carbide (SiC) gate oxide reliability still remains a crucial issue and is amongst the important consideration factors when it comes to the implementation of SiC MOS-based devices within industrial power electronic applications. Recent studies have emerged assessing the gate oxide reliability of SiC MOSFETs. Such studies are needed in order to fully understand the properties of SiC/SiO2 interface which is currently holding back the industry from fully utilising the superior features that SiC may offer. This paper aims to present experimental results showing the threshold voltage (VTH) and gate leakage current (IGSS) behaviour of SiC MOSFETs when subjected to pulsed-gate switching bias and drain-source bias stress at high temperature over time. The results obtained are then used to investigate the gate-oxide reliability of SiC MOSFETs. 2D TCAD static simulation results showing electric field distribution near the SiC/SiO2 interface are also presented in this paper.

Journal Article Type Article
Publication Date 2015-08
Journal Microelectronics Reliability
Print ISSN 0026-2714
Electronic ISSN 0026-2714
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 55
Issue 9-10
Pages 1724-1728
APA6 Citation Fayyaz, A., & Castellazzi, A. (2015). High temperature pulsed-gate robustness testing of SiC power MOSFETs. Microelectronics Reliability, 55(9-10), 1724-1728. https://doi.org/10.1016/j.microrel.2015.06.141
DOI https://doi.org/10.1016/j.microrel.2015.06.141
Keywords SiC; Power MOSFETs; Gate-oxide reliability; Robustness;
Wide bandgap; SiC/SiO2 interface
Publisher URL http://www.sciencedirect.com/science/article/pii/S0026271415300822
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nc-nd/4.0
Additional Information This article is maintained by: Elsevier; Article Title: High temperature pulsed-gate robustness testing of SiC power MOSFETs; Journal Title: Microelectronics Reliability; CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.microrel.2015.06.141; Content Type: article; Copyright: Copyright © 2015 Elsevier Ltd. All rights reserved.

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nc-nd/4.0





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