Skip to main content

Research Repository

Advanced Search

High temperature pulsed-gate robustness testing of SiC power MOSFETs

Fayyaz, A.; Castellazzi, A.

Authors

A. Castellazzi



Abstract

© 2015 Elsevier Ltd. Silicon Carbide (SiC) gate oxide reliability still remains a crucial issue and is amongst the important consideration factors when it comes to the implementation of SiC MOS-based devices within industrial power electronic applications. Recent studies have emerged assessing the gate oxide reliability of SiC MOSFETs. Such studies are needed in order to fully understand the properties of SiC/SiO2 interface which is currently holding back the industry from fully utilising the superior features that SiC may offer. This paper aims to present experimental results showing the threshold voltage (VTH) and gate leakage current (IGSS) behaviour of SiC MOSFETs when subjected to pulsed-gate switching bias and drain-source bias stress at high temperature over time. The results obtained are then used to investigate the gate-oxide reliability of SiC MOSFETs. 2D TCAD static simulation results showing electric field distribution near the SiC/SiO2 interface are also presented in this paper.

Citation

Fayyaz, A., & Castellazzi, A. (2015). High temperature pulsed-gate robustness testing of SiC power MOSFETs. Microelectronics Reliability, 55(9-10), 1724-1728. https://doi.org/10.1016/j.microrel.2015.06.141

Journal Article Type Article
Acceptance Date Jun 30, 2015
Online Publication Date Jul 29, 2015
Publication Date 2015-08
Deposit Date Aug 3, 2016
Publicly Available Date Aug 3, 2016
Journal Microelectronics Reliability
Print ISSN 0026-2714
Electronic ISSN 0026-2714
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 55
Issue 9-10
Pages 1724-1728
DOI https://doi.org/10.1016/j.microrel.2015.06.141
Keywords SiC; Power MOSFETs; Gate-oxide reliability; Robustness;
Wide bandgap; SiC/SiO2 interface
Public URL http://eprints.nottingham.ac.uk/id/eprint/35663
Publisher URL http://www.sciencedirect.com/science/article/pii/S0026271415300822
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nc-nd/4.0
Additional Information This article is maintained by: Elsevier; Article Title: High temperature pulsed-gate robustness testing of SiC power MOSFETs; Journal Title: Microelectronics Reliability; CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.microrel.2015.06.141; Content Type: article; Copyright: Copyright © 2015 Elsevier Ltd. All rights reserved.

Files


High temperature pulsed-gate robustness testing of SiC power MOSFETs.pdf (1 Mb)
PDF

Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nc-nd/4.0





You might also like



Downloadable Citations