High temperature pulsed-gate robustness testing of SiC power MOSFETs

Fayyaz, A.; Castellazzi, A.

Abstract

© 2015 Elsevier Ltd. Silicon Carbide (SiC) gate oxide reliability still remains a crucial issue and is amongst the important consideration factors when it comes to the implementation of SiC MOS-based devices within industrial power electronic applications. Recent studies have emerged assessing the gate oxide reliability of SiC MOSFETs. Such studies are needed in order to fully understand the properties of SiC/SiO2 interface which is currently holding back the industry from fully utilising the superior features that SiC may offer. This paper aims to present experimental results showing the threshold voltage (VTH) and gate leakage current (IGSS) behaviour of SiC MOSFETs when subjected to pulsed-gate switching bias and drain-source bias stress at high temperature over time. The results obtained are then used to investigate the gate-oxide reliability of SiC MOSFETs. 2D TCAD static simulation results showing electric field distribution near the SiC/SiO2 interface are also presented in this paper.

Citation

Fayyaz, A., & Castellazzi, A. (2015). High temperature pulsed-gate robustness testing of SiC power MOSFETs. Microelectronics Reliability, 55(9-10), 1724-1728. https://doi.org/10.1016/j.microrel.2015.06.141

• Journal Article Type: Article
• Acceptance Date: Jun 30, 2015
• Online Publication Date: Jul 29, 2015
• Publication Date: 2015-08
• Deposit Date: Aug 3, 2016
• Publicly Available Date: Aug 3, 2016
• Journal: Microelectronics Reliability
• Print ISSN: 0026-2714
• Electronic ISSN: 0026-2714
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 55
• Issue: 9-10
• Pages: 1724-1728
• DOI: https://doi.org/10.1016/j.microrel.2015.06.141
• Keywords: SiC; Power MOSFETs; Gate-oxide reliability; Robustness; ; Wide bandgap; SiC/SiO2 interface
• Public URL: http://eprints.nottingham.ac.uk/id/eprint/35663
• Publisher URL: http://www.sciencedirect.com/science/article/pii/S0026271415300822
• Copyright Statement: Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nc-nd/4.0
• Additional Information: This article is maintained by: Elsevier; Article Title: High temperature pulsed-gate robustness testing of SiC power MOSFETs; Journal Title: Microelectronics Reliability; CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.microrel.2015.06.141; Content Type: article; Copyright: Copyright © 2015 Elsevier Ltd. All rights reserved.