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A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs

Fayyaz, Asad; Romano, Gianpaolo; Urresti, Jesus; Riccio, Michele; Castellazzi, Alberto; Irace, Andrea; Wright, Nick

Authors

Asad Fayyaz

Gianpaolo Romano

Jesus Urresti

Michele Riccio

Alberto Castellazzi

Andrea Irace

Nick Wright



Abstract

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy during avalanche breakdown. Avalanche energy (EAV) is an important figure of merit for all applications requiring load dumping and/or to benefit from snubber-less converter design. 2D TCAD electro-thermal simulations were performed to get important insight into the failure mechanism of SiC power MOSFETs during avalanche breakdown

Journal Article Type Article
Publication Date Apr 1, 2017
Journal Energies
Electronic ISSN 1996-1073
Publisher MDPI
Peer Reviewed Peer Reviewed
Volume 10
Issue 4
Article Number 452
APA6 Citation Fayyaz, A., Romano, G., Urresti, J., Riccio, M., Castellazzi, A., Irace, A., & Wright, N. (2017). A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs. Energies, 10(4), https://doi.org/10.3390/en10040452
DOI https://doi.org/10.3390/en10040452
Keywords avalanche breakdown; silicon carbide (SiC); wide band-gap (WBG); power MOSFET; unclamped inductive switching (UIS); failure mechanism; leakage current
Publisher URL http://www.mdpi.com/1996-1073/10/4/452
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0





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