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Multi-chip SiC MOSFET power modules for standard manufacturing, mounting and cooling

Castellazzi, Alberto; Fayyaz, Asad; Gurpinar, Emre; Hussein, Abdallah; Li, Jianfeng; Mouawad, Bassem

Authors

Alberto Castellazzi

Asad Fayyaz

Emre Gurpinar

Abdallah Hussein

Jianfeng Li

Bassem Mouawad

Abstract

Taking full advantage of the superior characteristics of SiC Power MOSFETs in the application requires the development of bespoke packaging solutions. Their design needs to thoroughly encompass electromagnetic and electro-thermal aspects to yield major system-level benefits. New design approaches are needed in particular for parallel multi-chip structures at higher voltage ratings. With the aim of enabling full exploitation of the disruptive potential of SiC technology, this paper proposes a review of learnings made in the development of SiC bespoke power modules, focusing in particular on module designs compatible with the most widely established manufacturing, converter assembly and thermal management solutions for large volume applications.

Start Date May 20, 2018
Publication Date May 20, 2018
Publisher Institute of Electrical and Electronics Engineers
Pages 130-136
Book Title The 2018 International Power Electronics Conference - EECE Asia - IPEC 2018
ISBN 9784886864055
DOI https://doi.org/10.23919/IPEC.2018.8507834
Publisher URL https://ieeexplore.ieee.org/document/8507834
Additional Information © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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