All Outputs (14)

Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design (2023)
Conference Proceeding

This paper aims to investigate the current imbalance within parallel connected common-source configuration of SiC Power MOSFET switches using double pulse transient operation. Mismatches in electro-thermal parameters e.g., threshold voltage (Vth and... Read More about Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design.

Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances (2023)
Conference Proceeding

This paper presents a behavioural silicon carbide (SiC) IGBT model that utilizes voltage and current dependent capacitances to simulate its switching characteristics, and a voltage dependent current source to simulate the static characteristics. The... Read More about Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances.

Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs (2022)
Conference Proceeding

Silicon Carbide (SiC) N-channel Insulated Gate Bipolar Transistors (n-IGBTs) rated higher than 10kV can improve Medium Voltage and High Voltage power electronics due to the favourable combination of SiC material with the nIGBT device structure. This... Read More about Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs.

Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT (2022)
Conference Proceeding

This paper presents a comprehensive short-circuit robustness investigation of 4H- Silicon Carbide (SiC) n-type Insulated Gate Bipolar Transistors (nIGBTs) for Medium-Voltage and High- Voltage applications. Numerical electrothermal TCAD simulations ev... Read More about Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT.

Cooling System Sizing using LPTN Analysis and Multiphysics Modelling for an Axial Flux Machine and Integrated Drive (2022)
Conference Proceeding

In this paper a Lumped Parameter Thermal Network (LPTN) is proposed for a Yokeless and Segmented Armature (YASA) axial flux permanent magnet (AFPM) machine. A simulation model is used to examine the machine in isolation, with an Integrated Motor Driv... Read More about Cooling System Sizing using LPTN Analysis and Multiphysics Modelling for an Axial Flux Machine and Integrated Drive.

Reduce-Order Analysis and Circuit-Level Cost Function for the Numerical Optimization of Power Electronics Modules (2021)
Conference Proceeding

Energy innovation trends such as sustainable grids, and the electrification of the consumer transportation market are accelerating the adoption of medium-voltage (MV) silicon-carbide (SiC) technology. The fast switching times and higher operating tem... Read More about Reduce-Order Analysis and Circuit-Level Cost Function for the Numerical Optimization of Power Electronics Modules.

Real-Time Thermal Imaging Using Augmented Reality and Accelerated 3D Models (2020)
Conference Proceeding

We present an innovative method to allow real-time visualisation of temperature fields on power electronic circuits using augmented reality. A real-time time-domain simulation incorporating the Block Arnoldi model order reduction techniques is implem... Read More about Real-Time Thermal Imaging Using Augmented Reality and Accelerated 3D Models.

Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation (2018)
Conference Proceeding

© 2018 IEEE Project aims to develop capability for OEMs and suppliers to 'virtually-connect' multiple prototype powertrain components (engine, motor-drive etc.) and engage in real-time system simulation, thereby reducing cost by eliminating co-locati... Read More about Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation.

Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool (2017)
Conference Proceeding

Using virtual prototyping (VP) design tool to eval¬uate power converter electro-thermal performance can help designers to validate prototype in a quick way. However, different system time-scale requires efficient electro-thermal simulation techniques... Read More about Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool.

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions (2016)
Conference Proceeding

SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change whe... Read More about SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions.

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation (2016)
Conference Proceeding

SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In order to compare performance of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses... Read More about SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation.

Developing power semiconductor device model for virtual prototyping of power electronics systems (2016)
Conference Proceeding

Virtual prototyping (VP) is very important for power electronics systems design. A virtual prototyping design tool based on different modelling technology and model order reduction is proposed in the paper. In order to combine circuit electromagnetic... Read More about Developing power semiconductor device model for virtual prototyping of power electronics systems.

GaN-HEMT dynamic ON-state resistance characterisation and modelling (2016)
Conference Proceeding

GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based... Read More about GaN-HEMT dynamic ON-state resistance characterisation and modelling.

Packaging/assembling technologies for a high performance SiC-based planar power module
Conference Proceeding

This work is to investigate the relevant packaging / assembling technologies for developing a SiC-based planar power module which is aimed to meet the requirements such as operating temperature of -60 °C to 200 °C, SiC devices connected to 540 V DC b... Read More about Packaging/assembling technologies for a high performance SiC-based planar power module.