GaN-HEMT dynamic ON-state resistance characterisation and modelling

Li, Ke; Evans, Paul; Johnson, Christopher Mark

Abstract

GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement results, a behavioural model is proposed to represent device dynamic RDS(on) values, in which trapping and detrapping time constant is represented by a series of RC network. The model is simulated in PSPICE, of which the simulation results of RDS(on) values are compared and validated with the measurement when device switches in a power converter with different duty cycles and switching voltages. The results show that RDS(on) values of this device would increase due to trapping effects.

Citation

Li, K., Evans, P., & Johnson, C. M. (2016). GaN-HEMT dynamic ON-state resistance characterisation and modelling.

• Conference Name: 17th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2016
• Acceptance Date: Apr 7, 2016
• Publication Date: Jun 30, 2016
• Deposit Date: Jul 13, 2016
• Publicly Available Date: Jul 13, 2016
• Peer Reviewed: Peer Reviewed
• Keywords: GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Behavioural model
• Public URL: https://nottingham-repository.worktribe.com/output/792893
• Related Public URLs: http://sites.ieee.org/compel2016/
• Additional Information: ISBN 9781509018154