Ke Li
GaN-HEMT dynamic ON-state resistance characterisation and modelling
Li, Ke; Evans, Paul; Johnson, Christopher Mark
Authors
PAUL EVANS paul.evans@nottingham.ac.uk
Associate Professor
MARK JOHNSON MARK.JOHNSON@NOTTINGHAM.AC.UK
Professor of Advanced Power Conversion
Abstract
GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement results, a behavioural model is proposed to represent device dynamic RDS(on) values, in which trapping and detrapping time constant is represented by a series of RC network. The model is simulated in PSPICE, of which the simulation results of RDS(on) values are compared and validated with the measurement when device switches in a power converter with different duty cycles and switching voltages. The results show that RDS(on) values of this device would increase due to trapping effects.
Citation
Li, K., Evans, P., & Johnson, C. M. (2016). GaN-HEMT dynamic ON-state resistance characterisation and modelling.
Conference Name | 17th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2016 |
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Acceptance Date | Apr 7, 2016 |
Publication Date | Jun 30, 2016 |
Deposit Date | Jul 13, 2016 |
Publicly Available Date | Jul 13, 2016 |
Peer Reviewed | Peer Reviewed |
Keywords | GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Behavioural model |
Public URL | https://nottingham-repository.worktribe.com/output/792893 |
Related Public URLs | http://sites.ieee.org/compel2016/ |
Additional Information | ISBN 9781509018154 |
Contract Date | Jul 13, 2016 |
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