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GaN-HEMT dynamic ON-state resistance characterisation and modelling

Li, Ke; Evans, Paul; Johnson, Christopher Mark


Ke Li

Associate Professor

Professor of Advanced Power Conversion


GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement results, a behavioural model is proposed to represent device dynamic RDS(on) values, in which trapping and detrapping time constant is represented by a series of RC network. The model is simulated in PSPICE, of which the simulation results of RDS(on) values are compared and validated with the measurement when device switches in a power converter with different duty cycles and switching voltages. The results show that RDS(on) values of this device would increase due to trapping effects.


Li, K., Evans, P., & Johnson, C. M. (2016). GaN-HEMT dynamic ON-state resistance characterisation and modelling.

Conference Name 17th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2016
Acceptance Date Apr 7, 2016
Publication Date Jun 30, 2016
Deposit Date Jul 13, 2016
Publicly Available Date Jul 13, 2016
Peer Reviewed Peer Reviewed
Keywords GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Behavioural model
Public URL
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Additional Information ISBN 9781509018154


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