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GaN-HEMT dynamic ON-state resistance characterisation and modelling

Li, Ke; Evans, Paul; Johnson, Christopher Mark

Authors

Ke Li Ke.Li@nottingham.ac.uk

Paul Evans paul.evans@nottingham.ac.uk

Christopher Mark Johnson mark.johnson@nottingham.ac.uk



Abstract

GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement results, a behavioural model is proposed to represent device dynamic RDS(on) values, in which trapping and detrapping time constant is represented by a series of RC network. The model is simulated in PSPICE, of which the simulation results of RDS(on) values are compared and validated with the measurement when device switches in a power converter with different duty cycles and switching voltages. The results show that RDS(on) values of this device would increase due to trapping effects.

Publication Date Jun 30, 2016
Peer Reviewed Peer Reviewed
APA6 Citation Li, K., Evans, P., & Johnson, C. M. (2016). GaN-HEMT dynamic ON-state resistance characterisation and modelling
Keywords GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Behavioural model
Related Public URLs http://sites.ieee.org/compel2016/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information ISBN 9781509018154

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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