All Outputs (14)

Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs (2008)
Book Chapter

The growth of cubic (Ga,Mn)N/(001)GaAs heterostructures by plasma assisted molecular beam epitaxy has been appraised as a function of Ga:N ratio, Mn concentration and growth temperature. The combined analytical techniques of EFTEM, EDX, CBED and dark... Read More about Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs.

Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy (2005)
Book Chapter

Observations of orthogonal orientations demonstrate the development of banded contrast features on inclined {-1-1-1}B planes for the [110] projection within micron thick samples, attributed to a compositional fluctuation in the Mn content. The relat... Read More about Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy.

Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux (2005)
Book Chapter

Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth... Read More about Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux.

Structural characterisation of carbon nanotubes in the presence of a Ni catalyst (2004)
Book Chapter

Multi-wall carbon nanotubes (MWNTs) grown by chemical vapour deposition (CVD) of an ethene / hydrogen gas mixture on alumina supported and unsupported nickel catalysts for 10, 20 and 120 minutes at 600oC and 700oC are compared. Nano-scale nickel part... Read More about Structural characterisation of carbon nanotubes in the presence of a Ni catalyst.

TEM assessment of As-doped GaN epitaxial layers grown on sapphire (2004)
Book Chapter

TEM investigations of As-doped GaN layers grown by plasma-assisted molecular beam epitaxy on sapphire substrates reveal the presence of extensive regions of cubic stacking disorder within the hexagonal GaN matrix. Electron energy loss spectroscopy su... Read More about TEM assessment of As-doped GaN epitaxial layers grown on sapphire.

Characterisation of dispersions within annealed HVOLF thermally sprayed AlSnCu coatings (2004)
Book Chapter

High velocity oxy-liquid fuel (HVOLF) AlSnCu coatings are characterised following annealing for up to 5 hours at 300°C. A combination of statistical analysis of BSE images and TEM observations demonstrate the decrease in the number of sub-micron and... Read More about Characterisation of dispersions within annealed HVOLF thermally sprayed AlSnCu coatings.

The application of tripod polishing and focused ion beam milling to the TEM specimen preparation of HVOF thermally sprayed coatings (2004)
Book Chapter

The microstructure of high velocity oxy fuel thermally sprayed coatings is highly anisotropic and inhomogeneous. Tripod polishing has enabled the preparation of samples with up to 0.5mm diameter electron transparent areas, where a statistically signi... Read More about The application of tripod polishing and focused ion beam milling to the TEM specimen preparation of HVOF thermally sprayed coatings.

Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN (2004)
Book Chapter

A correlated current-voltage (I-V), electron beam induced conductivity (EBIC) and X-ray photoelectron spectroscopy (XPS) study of Au contacts to KOH treated n-type GaN is presented. A strong degradation of I-V characteristics occurs following the KO... Read More about Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN.

EBIC study of Au / n-type GaN Schottky contacts (2003)
Book Chapter

The performance of Au / n-type GaN Schottky contacts is strongly dependent on the GaN surface processing prior to contacting. Current-voltage and EBIC line scans demonstrate that KOH treatment acts to degrade the Schottky contacts. EBIC imaging rev... Read More about EBIC study of Au / n-type GaN Schottky contacts.

Microstructural characterisation of a high velocity oxy-fuel thermally sprayed Al-12wt.%Sn-1wt.%Cu alloy (2001)
Book Chapter

High velocity oxy-fuel thermal sprayed Al-12wt.%Sn-1wt.%Cu alloy coatings have been characterised both in the as-sprayed condition and following heat treatment in air at 300?C for periods up to 5 hours. The as-sprayed microstructure comprises princip... Read More about Microstructural characterisation of a high velocity oxy-fuel thermally sprayed Al-12wt.%Sn-1wt.%Cu alloy.

Microstructural characterisation of biocompatible sol-gel derived vanadium doped TiO2 on Ti substrates (2001)
Book Chapter

Sol-gel derived pure titania is compared with vanadium and / or aluminium modified titania deposited by spin coating on pure titanium substrates annealed at 300C and 650C. Reflection high-energy electron diffraction indicated the presence of anatase... Read More about Microstructural characterisation of biocompatible sol-gel derived vanadium doped TiO2 on Ti substrates.

RHEED characterisation of the near surface microstructure of Ti-O based biocompatible coatings
Book Chapter

Mechanically polished, annealed, nitric acid treated and aged in boiling water after nitriding, commercially pure Ti substrates have been characterised using reflection high-energy electron diffraction (RHEED) and secondary electron imaging, in terms... Read More about RHEED characterisation of the near surface microstructure of Ti-O based biocompatible coatings.

TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN
Book Chapter

Ti and Pd barrier layers between the Al/Ti diffusion couple and the Au capping layer of multilayer ohmic contacts to n-type AlGaN/GaN field effect transistors were found to be ineffective in preventing the diffusion of Au to the AlGaN following high... Read More about TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN.

Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN
Book Chapter

Ti/Al/Ti/Au and Ti/Al/Pd/Au contacts to AlGaN/GaN have been investigated to ascertain the effect of annealing temperature on the structural evolution of the contacts. Ti/Al/Ti/Au contacts become ohmic after rapid thermal annealing at 750°C or higher,... Read More about Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN.