Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy

Fay, Mike W.; Han, Y.; Novikov, Sergei V.; Edmonds, K.W.; Wang, K.; Gallagher, B.L.; Campion, R.P.; Foxon, C.T.; Brown, Paul D.

Abstract

Observations of orthogonal orientations demonstrate the development of banded contrast features on inclined {-1-1-1}B planes for the [110] projection within micron thick samples, attributed to a compositional fluctuation in the Mn content. The relationship of Mn content and layer critical thickness for the onset of precipitate and stacking fault formation is investigated. The formation of a Mn-O layer at the surface of the samples is also observed. The growth of GaMnN/(001)GaAs heterostructures with and without AlN/GaN buffer layers is also compared. Layers without buffer layers show MnAs inclusions into the GaAs, with a reduced Mn content of the GaMnN layer significantly below the nominal composition. The use of AlN/GaN buffer layers is found to greatly reduce the density of these MnAs inclusions, retaining a higher proportion of the Mn within the epilayer.

Citation

Fay, M. W., Han, Y., Novikov, S. V., Edmonds, K., Wang, K., Gallagher, B., Campion, R., Foxon, C., & Brown, P. D. (2005). Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy. In A. Cullis, & A. Hutchison (Eds.), Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer-Verlag

• Publication Date: Jan 1, 2005
• Deposit Date: Aug 12, 2011
• Publicly Available Date: Aug 12, 2011
• Peer Reviewed: Peer Reviewed
• Issue: 107
• Series Title: Springer proceedings in physics
• Book Title: Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK
• ISBN: 9783540319146
• Keywords: TEM, spintronics, GaMnAs, GaMnN, MBE
• Public URL: https://nottingham-repository.worktribe.com/output/1020318
• Publisher URL: http://www.springer.com/materials/book/978-3-540-31914-6
• Additional Information: The original publication is available at www.springerlink.com