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Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing

Bradford, Jonathan; Dewes, Benjamin T.; Shiffa, Mustaqeem; Cottam, Nathan D.; Rahman, Kazi; Cheng, Tin S.; Novikov, Sergei V.; Makarovsky, Oleg; O'Shea, James N.; Beton, Peter H.; Lara-Avila, Samuel; Harknett, Jordan; Greenaway, Mark T.; Patanè, Amalia

Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing Thumbnail


Authors

Benjamin T. Dewes

Mustaqeem Shiffa

Nathan D. Cottam

Kazi Rahman

Profile image of JAMES O'SHEA

Dr JAMES O'SHEA J.OSHEA@NOTTINGHAM.AC.UK
ASSOCIATE PROFESSOR AND READER IN PHYSICS

Samuel Lara-Avila

Jordan Harknett

Mark T. Greenaway



Abstract

2D semiconductors can drive advances in quantum science and technologies. However, they should be free of any contamination; also, the crystallographic ordering and coupling of adjacent layers and their electronic properties should be well‐controlled, tunable, and scalable. Here, these challenges are addressed by a new approach, which combines molecular beam epitaxy and in situ band engineering in ultra‐high vacuum of semiconducting gallium selenide (GaSe) on graphene. In situ studies by electron diffraction, scanning probe microscopy, and angle‐resolved photoelectron spectroscopy reveal that atomically‐thin layers of GaSe align in the layer plane with the underlying lattice of graphene. The GaSe/graphene heterostructure, referred to as 2semgraphene, features a centrosymmetric (group symmetry D3d) polymorph of GaSe, a charge dipole at the GaSe/graphene interface, and a band structure tunable by the layer thickness. The newly‐developed, scalable 2semgraphene is used in optical sensors that exploit the photoactive GaSe layer and the built‐in potential at its interface with the graphene channel. This proof of concept has the potential for further advances and device architectures that exploit 2semgraphene as a functional building block.

Citation

Bradford, J., Dewes, B. T., Shiffa, M., Cottam, N. D., Rahman, K., Cheng, T. S., Novikov, S. V., Makarovsky, O., O'Shea, J. N., Beton, P. H., Lara-Avila, S., Harknett, J., Greenaway, M. T., & Patanè, A. (2024). Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing. Small, 20(40), Article 2404809. https://doi.org/10.1002/smll.202404809

Journal Article Type Article
Acceptance Date Aug 9, 2024
Online Publication Date Aug 21, 2024
Publication Date Oct 3, 2024
Deposit Date Aug 15, 2024
Publicly Available Date Aug 22, 2025
Journal Small
Print ISSN 1613-6810
Electronic ISSN 1613-6829
Publisher Wiley
Peer Reviewed Peer Reviewed
Volume 20
Issue 40
Article Number 2404809
DOI https://doi.org/10.1002/smll.202404809
Public URL https://nottingham-repository.worktribe.com/output/38378669
Publisher URL https://onlinelibrary.wiley.com/doi/10.1002/smll.202404809

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