Dr JONATHAN BRADFORD JONATHAN.BRADFORD@NOTTINGHAM.AC.UK
RESEARCH FELLOW
Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing
Bradford, Jonathan; Dewes, Benjamin T.; Shiffa, Mustaqeem; Cottam, Nathan D.; Rahman, Kazi; Cheng, Tin S.; Novikov, Sergei V.; Makarovsky, Oleg; O'Shea, James N.; Beton, Peter H.; Lara-Avila, Samuel; Harknett, Jordan; Greenaway, Mark T.; Patanè, Amalia
Authors
Benjamin T. Dewes
Mustaqeem Shiffa
Nathan D. Cottam
Kazi Rahman
Dr TIN CHENG Tin.Cheng@nottingham.ac.uk
RESEARCH FELLOW
Professor SERGEI NOVIKOV sergei.novikov@nottingham.ac.uk
PROFESSOR OF PHYSICS
Dr OLEG MAKAROVSKIY Oleg.Makarovsky@nottingham.ac.uk
ASSOCIATE PROFESSOR
Dr JAMES O'SHEA J.OSHEA@NOTTINGHAM.AC.UK
ASSOCIATE PROFESSOR AND READER IN PHYSICS
Professor Peter Beton peter.beton@nottingham.ac.uk
PROFESSOR OF PHYSICS
Samuel Lara-Avila
Jordan Harknett
Mark T. Greenaway
Professor Amalia Patane AMALIA.PATANE@NOTTINGHAM.AC.UK
PROFESSOR OF PHYSICS
Abstract
2D semiconductors can drive advances in quantum science and technologies. However, they should be free of any contamination; also, the crystallographic ordering and coupling of adjacent layers and their electronic properties should be well‐controlled, tunable, and scalable. Here, these challenges are addressed by a new approach, which combines molecular beam epitaxy and in situ band engineering in ultra‐high vacuum of semiconducting gallium selenide (GaSe) on graphene. In situ studies by electron diffraction, scanning probe microscopy, and angle‐resolved photoelectron spectroscopy reveal that atomically‐thin layers of GaSe align in the layer plane with the underlying lattice of graphene. The GaSe/graphene heterostructure, referred to as 2semgraphene, features a centrosymmetric (group symmetry D3d) polymorph of GaSe, a charge dipole at the GaSe/graphene interface, and a band structure tunable by the layer thickness. The newly‐developed, scalable 2semgraphene is used in optical sensors that exploit the photoactive GaSe layer and the built‐in potential at its interface with the graphene channel. This proof of concept has the potential for further advances and device architectures that exploit 2semgraphene as a functional building block.
Citation
Bradford, J., Dewes, B. T., Shiffa, M., Cottam, N. D., Rahman, K., Cheng, T. S., Novikov, S. V., Makarovsky, O., O'Shea, J. N., Beton, P. H., Lara-Avila, S., Harknett, J., Greenaway, M. T., & Patanè, A. (2024). Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing. Small, 20(40), Article 2404809. https://doi.org/10.1002/smll.202404809
Journal Article Type | Article |
---|---|
Acceptance Date | Aug 9, 2024 |
Online Publication Date | Aug 21, 2024 |
Publication Date | Oct 3, 2024 |
Deposit Date | Aug 15, 2024 |
Publicly Available Date | Aug 22, 2025 |
Journal | Small |
Print ISSN | 1613-6810 |
Electronic ISSN | 1613-6829 |
Publisher | Wiley |
Peer Reviewed | Peer Reviewed |
Volume | 20 |
Issue | 40 |
Article Number | 2404809 |
DOI | https://doi.org/10.1002/smll.202404809 |
Public URL | https://nottingham-repository.worktribe.com/output/38378669 |
Publisher URL | https://onlinelibrary.wiley.com/doi/10.1002/smll.202404809 |
Files
Epitaxy of GaSe Coupled to Graphene: From In Situ BandEngineering to Photon Sensing
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Publisher Licence URL
https://creativecommons.org/licenses/by/4.0/
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