Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy

Fay, Mike W.; Han, Y.; Novikov, Sergei V.; Edmonds, K.W.; Wang, K.; Gallagher, B.L.; Campion, R.P.; Foxon, C.T.; Brown, Paul D.

Abstract

Observations of orthogonal orientations demonstrate the development of banded contrast features on inclined {-1-1-1}B planes for the [110] projection within micron thick samples, attributed to a compositional fluctuation in the Mn content. The relationship of Mn content and layer critical thickness for the onset of precipitate and stacking fault formation is investigated. The formation of a Mn-O layer at the surface of the samples is also observed. The growth of GaMnN/(001)GaAs heterostructures with and without AlN/GaN buffer layers is also compared. Layers without buffer layers show MnAs inclusions into the GaAs, with a reduced Mn content of the GaMnN layer significantly below the nominal composition. The use of AlN/GaN buffer layers is found to greatly reduce the density of these MnAs inclusions, retaining a higher proportion of the Mn within the epilayer.

Citation

Fay, M. W., Han, Y., Novikov, S. V., Edmonds, K., Wang, K., Gallagher, B., …Brown, P. D. (2005). Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy. In A. Cullis, & A. Hutchison (Eds.), Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer-Verlag

• Publication Date: Jan 1, 2005
• Deposit Date: Aug 12, 2011
• Publicly Available Date: Aug 12, 2011
• Peer Reviewed: Peer Reviewed
• Issue: 107
• Series Title: Springer proceedings in physics
• Book Title: Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK
• ISBN: 9783540319146
• Keywords: TEM, spintronics, GaMnAs, GaMnN, MBE
• Public URL: https://nottingham-repository.worktribe.com/output/1020318
• Publisher URL: http://www.springer.com/materials/book/978-3-540-31914-6
• Additional Information: The original publication is available at www.springerlink.com