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Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux

Han, Y.; Fay, Mike W.; Brown, Paul D.; Novikov, Sergei V.; Edmonds, K.W.; Gallagher, B.L.; Campion, R.P.; Foxon, C.T.

Authors

Y. Han

Mike W. Fay

Paul D. Brown

Sergei V. Novikov

K.W. Edmonds

B.L. Gallagher

R.P. Campion

C.T. Foxon



Contributors

A.G. Cullis
Editor

J.L. Hutchison
Editor

Abstract

Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-rich conditions). N-rich conditions were found favourable for Mn incorporation in GaN lattice. α-MnAs inclusions were identified extending into the GaAs buffer layer.

Publication Date Jan 1, 2005
Peer Reviewed Peer Reviewed
Issue 107
Series Title Springer proceedings in physics
Book Title Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK
ISBN 9783540319146
APA6 Citation Han, Y., Fay, M. W., Brown, P. D., Novikov, S. V., Edmonds, K., Gallagher, B., …Foxon, C. (2005). Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux. In J. Hutchison, & A. Cullis (Eds.), Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UKSpringer-Verlag
Keywords TEM, spintronics, GaMnN, MBE
Publisher URL http://www.springer.com/materials/book/978-3-540-31914-6
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information The original publication is available at www.springerlink.com

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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