Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux

Han, Y.; Fay, Mike W.; Brown, Paul D.; Novikov, Sergei V.; Edmonds, K.W.; Gallagher, B.L.; Campion, R.P.; Foxon, C.T.

Abstract

Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-rich conditions). N-rich conditions were found favourable for Mn incorporation in GaN lattice. α-MnAs inclusions were identified extending into the GaAs buffer layer.

Citation

Han, Y., Fay, M. W., Brown, P. D., Novikov, S. V., Edmonds, K., Gallagher, B., …Foxon, C. (2005). Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux. In A. Cullis, & J. Hutchison (Eds.), Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer-Verlag

• Publication Date: Jan 1, 2005
• Deposit Date: Aug 12, 2011
• Publicly Available Date: Aug 12, 2011
• Peer Reviewed: Peer Reviewed
• Issue: 107
• Series Title: Springer proceedings in physics
• Book Title: Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK
• ISBN: 9783540319146
• Keywords: TEM, spintronics, GaMnN, MBE
• Public URL: https://nottingham-repository.worktribe.com/output/1020378
• Publisher URL: http://www.springer.com/materials/book/978-3-540-31914-6
• Additional Information: The original publication is available at www.springerlink.com