Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs

Fay, Mike W.; Han, Y.; Novikov, Sergei V.; Edmonds, K.W.; Gallagher, B.L.; Campion, R.P.; Staddon, C.R.; Foxon, C.T.; Brown, Paul D.

Abstract

The growth of cubic (Ga,Mn)N/(001)GaAs heterostructures by plasma assisted molecular beam epitaxy has been appraised as a function of Ga:N ratio, Mn concentration and growth temperature. The combined analytical techniques of EFTEM, EDX, CBED and dark field imaging have been used to appraise the Mn distributions within (Ga,Mn)N epilayers. Improved incorporation efficiency of Mn is associated with growth under N-rich conditions, but Mn incorporation may be enhanced under Ga-rich conditions at reduced growth temperatures. The surfactant behaviour of Mn during the growth of this spintronic system determines the resultant alloy composition.

Citation

Fay, M. W., Han, Y., Novikov, S. V., Edmonds, K., Gallagher, B., Campion, R., Staddon, C., Foxon, C., & Brown, P. D. (2008). Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs. In A. Cullis, & P. Midgley (Eds.), Microscopy of semiconducting materials 2007: proceedings of the 15th conference, 2-5 April 2007, Cambridge, UK. Springer-Verlag

• Publication Date: Jan 1, 2008
• Deposit Date: Aug 12, 2011
• Publicly Available Date: Aug 12, 2011
• Peer Reviewed: Peer Reviewed
• Issue: 120
• Series Title: Springer proceedings in physics
• Book Title: Microscopy of semiconducting materials 2007: proceedings of the 15th conference, 2-5 April 2007, Cambridge, UK
• ISBN: 9781402086144
• Keywords: TEM, spintronics, GaMnN, MBE
• Public URL: https://nottingham-repository.worktribe.com/output/1015740
• Publisher URL: http://www.springer.com/materials/book/978-1-4020-8614-4
• Additional Information: The original publication is available at www.springerlink.com