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Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs

Fay, Mike W.; Han, Y.; Novikov, Sergei V.; Edmonds, K.W.; Gallagher, B.L.; Campion, R.P.; Staddon, C.R.; Foxon, C.T.; Brown, Paul D.

Authors

Mike W. Fay

Y. Han

Sergei V. Novikov

K.W. Edmonds

B.L. Gallagher

R.P. Campion

C.R. Staddon

C.T. Foxon

Paul D. Brown



Contributors

A.G. Cullis
Editor

P.A. Midgley
Editor

Abstract

The growth of cubic (Ga,Mn)N/(001)GaAs heterostructures by plasma assisted molecular beam epitaxy has been appraised as a function of Ga:N ratio, Mn concentration and growth temperature. The combined analytical techniques of EFTEM, EDX, CBED and dark field imaging have been used to appraise the Mn distributions within (Ga,Mn)N epilayers. Improved incorporation efficiency of Mn is associated with growth under N-rich conditions, but Mn incorporation may be enhanced under Ga-rich conditions at reduced growth temperatures. The surfactant behaviour of Mn during the growth of this spintronic system determines the resultant alloy composition.

Citation

Fay, M. W., Han, Y., Novikov, S. V., Edmonds, K., Gallagher, B., Campion, R., …Brown, P. D. (2008). Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs. In A. Cullis, & P. Midgley (Eds.), Microscopy of semiconducting materials 2007: proceedings of the 15th conference, 2-5 April 2007, Cambridge, UK. Springer-Verlag

Publication Date Jan 1, 2008
Deposit Date Aug 12, 2011
Publicly Available Date Mar 28, 2024
Peer Reviewed Peer Reviewed
Issue 120
Series Title Springer proceedings in physics
Book Title Microscopy of semiconducting materials 2007: proceedings of the 15th conference, 2-5 April 2007, Cambridge, UK
ISBN 9781402086144
Keywords TEM, spintronics, GaMnN, MBE
Public URL https://nottingham-repository.worktribe.com/output/1015740
Publisher URL http://www.springer.com/materials/book/978-1-4020-8614-4
Additional Information The original publication is available at www.springerlink.com

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