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Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN

Moldovan, Grigore; Harrison, Ian; Roe, Martin; Brown, Paul D.

Authors

Grigore Moldovan

Ian Harrison

Martin Roe

Paul D. Brown



Contributors

Stephen McVitie
Editor

David McComb
Editor

Abstract

A correlated current-voltage (I-V), electron beam induced conductivity (EBIC) and X-ray photoelectron spectroscopy (XPS) study of Au contacts to KOH treated n-type GaN is presented. A strong degradation of I-V characteristics occurs following the KOH treatment, mirrored in a reduction in the magnitude of the EBIC current, even though the EBIC images look visibly unaltered. XPS demonstrates a modification in the surfaces states, e.g. resulting in a –0.3eV shift in the binding energy of Ga3d for MBE GaN following KOH processing.

Publication Date Jan 1, 2004
Peer Reviewed Peer Reviewed
Issue 179
Series Title Institute of Physics conference series
Book Title Electron microscopy and analysis 2003: proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003
ISBN 750309679
APA6 Citation Moldovan, G., Harrison, I., Roe, M., & Brown, P. D. (2004). Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN. In S. McVitie, & D. McComb (Eds.), Electron microscopy and analysis 2003: proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003Institute of Physics Publishing
Keywords I-V
EBIC
XPS
GaN
Related Public URLs http://iopscience.iop.org/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf

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Inst._Phys._Conf._Ser._179_(2004)_pp_115-118.pdf (565 Kb)
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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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