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TEM assessment of As-doped GaN epitaxial layers grown on sapphire

Fay, Mike W.; Harrison, Ian; Larkins, Eric C.; Novikov, Sergei V.; Foxon, C.T.; Brown, Paul D.

Authors

Mike W. Fay

Ian Harrison

Eric C. Larkins

Sergei V. Novikov

C.T. Foxon

Paul D. Brown



Contributors

Stephen McVitie
Editor

David McComb
Editor

Abstract

TEM investigations of As-doped GaN layers grown by plasma-assisted molecular beam epitaxy on sapphire substrates reveal the presence of extensive regions of cubic stacking disorder within the hexagonal GaN matrix. Electron energy loss spectroscopy suggests the localization of As within grains immediately below domains containing stacking disorder, and additionally at the layer surface. This suggests that localised strain plays a role in the formation mechanism of the stacking faults.

Publication Date Jan 1, 2004
Peer Reviewed Peer Reviewed
Issue 179
Series Title Institute of Physics conference series
Book Title Electron Microscopy and Analysis 2003: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003
ISBN 750309679
APA6 Citation Fay, M. W., Harrison, I., Larkins, E. C., Novikov, S. V., Foxon, C., & Brown, P. D. (2004). TEM assessment of As-doped GaN epitaxial layers grown on sapphire. In S. McVitie, & D. McComb (Eds.), Electron Microscopy and Analysis 2003: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003Institute of Physics Publishing
Keywords EELS
TEM
GaN
Epitaxy
Doping
PAMBE
Related Public URLs http://iopscience.iop.org/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf

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Inst._Phys._Conf._Ser._179_(2004)_pp_23-26.pdf (272 Kb)
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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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