TEM assessment of As-doped GaN epitaxial layers grown on sapphire

Fay, Mike W.; Harrison, Ian; Larkins, Eric C.; Novikov, Sergei V.; Foxon, C.T.; Brown, Paul D.

Abstract

TEM investigations of As-doped GaN layers grown by plasma-assisted molecular beam epitaxy on sapphire substrates reveal the presence of extensive regions of cubic stacking disorder within the hexagonal GaN matrix. Electron energy loss spectroscopy suggests the localization of As within grains immediately below domains containing stacking disorder, and additionally at the layer surface. This suggests that localised strain plays a role in the formation mechanism of the stacking faults.

Citation

Fay, M. W., Harrison, I., Larkins, E. C., Novikov, S. V., Foxon, C., & Brown, P. D. (2004). TEM assessment of As-doped GaN epitaxial layers grown on sapphire. In S. McVitie, & D. McComb (Eds.), Electron Microscopy and Analysis 2003: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003 (23-26). Institute of Physics Publishing

• Publication Date: Jan 1, 2004
• Deposit Date: Mar 25, 2011
• Publicly Available Date: Mar 25, 2011
• Peer Reviewed: Peer Reviewed
• Issue: 179
• Pages: 23-26
• Series Title: Institute of Physics conference series
• Book Title: Electron Microscopy and Analysis 2003: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003
• ISBN: 750309679
• Keywords: EELS; TEM; GaN; Epitaxy; Doping; PAMBE
• Public URL: https://nottingham-repository.worktribe.com/output/1021438
• Related Public URLs: http://iopscience.iop.org/