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TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN

Fay, Mike W.; Moldovan, Grigore; Harrison, Ian; Balmer, R.S.; Soley, D.E.J.; Hilton, K.P.; Hughes, B.T.; Uren, M.J.; Martin, T.; Brown, Paul D.

Authors

Mike W. Fay

Grigore Moldovan

Ian Harrison

R.S. Balmer

D.E.J. Soley

K.P. Hilton

B.T. Hughes

M.J. Uren

T. Martin

Paul D. Brown



Contributors

A.G. Cullis
Editor

P.A. Midgely
Editor

Abstract

Ti and Pd barrier layers between the Al/Ti diffusion couple and the Au capping layer of multilayer ohmic contacts to n-type AlGaN/GaN field effect transistors were found to be ineffective in preventing the diffusion of Au to the AlGaN following high temperature rapid thermal annealing. The formation of a band of TiN grains at the contact/AlGaN interface is responsible for the activation of the contact. The presence of interfacial Au and threading dislocations are implicated in the formation of additional Ti-nitride inclusions into the AlGaN, although these do not appear to disrupt the Ti-nitride layer at the original contact/nitride interface, nor significantly influence the contact resistance.

Peer Reviewed Peer Reviewed
Issue 180
Series Title Institute of Physics conference series
Book Title Microscopy of semiconducting materials 2003: proceedings of the Institute of Physics conference, Cambridge University, 31 March - 3 April
ISBN 9780750309790
APA6 Citation Fay, M. W., Moldovan, G., Harrison, I., Balmer, R., Soley, D., Hilton, K., …Brown, P. D. TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN. In P. Midgely, & A. Cullis (Eds.), Microscopy of semiconducting materials 2003: proceedings of the Institute of Physics conference, Cambridge University, 31 March - 3 AprilIOP Publishing Ltd
Keywords TEM, ohmic contact, AlGaN/GaN, field effect transistor
Related Public URLs http://iopscience.iop.org/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf

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Inst._Phys._Conf._Ser._180_(2003)_pp_483-486.pdf (191 Kb)
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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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