Skip to main content

Research Repository

See what's under the surface

Advanced Search

EBIC study of Au / n-type GaN Schottky contacts

Moldovan, Grigore; Harrison, Ian; Brown, Paul D.

Authors

Grigore Moldovan

Ian Harrison

Paul D. Brown



Contributors

A.G. Cullis
Editor

P.A. Midgley
Editor

Abstract

The performance of Au / n-type GaN Schottky contacts is strongly dependent on the GaN surface processing prior to contacting. Current-voltage and EBIC line scans demonstrate that KOH treatment acts to degrade the Schottky contacts. EBIC imaging reveals the differing sub-grain boundary structures of MBE and MOCVD grown GaN / sapphire. The KOH treatment acts to uniformly change the properties of the GaN surface, rather than having a localised effect.

Publication Date Jan 1, 2003
Peer Reviewed Peer Reviewed
Issue 180
Series Title Institute of Physics conference series
Book Title Microscopy of semiconducting materials 2003 : proceedings of the Institute of Physics conference, Cambridge University, 31 March - 3 April 2003
ISBN 9780750309790
APA6 Citation Moldovan, G., Harrison, I., & Brown, P. D. (2003). EBIC study of Au / n-type GaN Schottky contacts. In A. Cullis, & P. Midgley (Eds.), Microscopy of semiconducting materials 2003 : proceedings of the Institute of Physics conference, Cambridge University, 31 March - 3 April 2003IOP Publishing Ltd
Keywords EBIC, Schottky contact, GaN
Related Public URLs http://iopscience.iop.org/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf

Files

Inst._Phys._Conf._Ser._180_(2003)_pp_577-580.pdf (270 Kb)
PDF

Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





You might also like



Downloadable Citations

;