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Investigating the impact of varying the number of distributed energy resources on controlling the power flow within a microgrid (2015)
Conference Proceeding
Fazeli, A., Sumner, M., Johnson, C. M., & Christopher, E. (2015). Investigating the impact of varying the number of distributed energy resources on controlling the power flow within a microgrid.

The electrification of heat and transport in addition to integration of intermittent renewable resources into the existing electricity network is expected to occur in near future. Such a transformation is expected to force the operation of the electr... Read More about Investigating the impact of varying the number of distributed energy resources on controlling the power flow within a microgrid.

Power flow control for power and voltage management in future smart energy communities (2014)
Conference Proceeding
Fazeli, A., Sumner, M., Christopher, E., & Johnson, C. M. (2014). Power flow control for power and voltage management in future smart energy communities.

The Community Power Flow Control (CPFC) Algorithm has been proposed as a technique for managing electrical power and energy within small communities. The CPFC manages the resources in the community (DSM, energy storage, RES) in order to control the c... Read More about Power flow control for power and voltage management in future smart energy communities.

Mission Profile-Based Reliability Design and Real-Time Life Consumption Estimation in Power Electronics (2014)
Journal Article
Mussallam, M., Yin, C., Bailey, C., & Johnson, C. M. (2015). Mission Profile-Based Reliability Design and Real-Time Life Consumption Estimation in Power Electronics. IEEE Transactions on Power Electronics, 30(5), 2601-2613. https://doi.org/10.1109/TPEL.2014.2358555

Power electronics are efficient for conversion and conditioning of the electrical energy through a wide range of applications. Proper life consumption estimation methods applied for power electronics that can operate in real time under in-service mis... Read More about Mission Profile-Based Reliability Design and Real-Time Life Consumption Estimation in Power Electronics.

Built-in reliability design of highly integrated solid-state power switches with metal bump interconnects (2014)
Journal Article
Li, J., Castellazzi, A., Dai, T., Corfield, M., Solomon, A. K., & Johnson, C. M. (2015). Built-in reliability design of highly integrated solid-state power switches with metal bump interconnects. IEEE Transactions on Power Electronics, 30(5), https://doi.org/10.1109/TPEL.2014.2357334

A stacked substrate–chip–bump–chip–substrate assembly has been demonstrated in the construction of power switch modules with high power density and good electrical performance. In this paper, special effort has been devoted to material selection and... Read More about Built-in reliability design of highly integrated solid-state power switches with metal bump interconnects.

Reliability of thick Al wire: a study of the effects of wire bonding parameters on thermal cycling degradation rate using non-destructive methods (2014)
Journal Article
Arjmand, E., Agyakwa, P. A., & Johnson, C. M. (2014). Reliability of thick Al wire: a study of the effects of wire bonding parameters on thermal cycling degradation rate using non-destructive methods. Microelectronics Reliability, 54(9-10), https://doi.org/10.1016/j.microrel.2014.07.119

The effect of bonding parameters on the reliability of thick Al wire bond is investigated. Samples were prepared with 25 different designs with 5 different bonding parameters such as time, ultrasonic power, begin- force, end-force and touch-down step... Read More about Reliability of thick Al wire: a study of the effects of wire bonding parameters on thermal cycling degradation rate using non-destructive methods.

Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles (2014)
Journal Article
Li, J., Johnson, C. M., Buttay, C., Sabbah, W., & Azzopardi, S. (2015). Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles. Journal of Materials Processing Technology, 215, 299-308. https://doi.org/10.1016/j.jmatprotec.2014.08.002

3 mm × 3 mm dummy SiC dies with 100\200\200 nm thick Ti\W\Au metallization have simultaneously been attached using sintering of Ag nanoparticle paste on AlN-based direct bonded copper substrates with 5\0.1 μm thick NiP\Au finish. The effect of prepar... Read More about Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles.

Integrated Half-Bridge Switch Using 70- ?m-Thin Devices and Hollow Interconnects (2014)
Journal Article
Solomon, A. K., Li, J., Castellazzi, A., & Johnson, C. M. (2015). Integrated Half-Bridge Switch Using 70- ?m-Thin Devices and Hollow Interconnects. IEEE Transactions on Industry Applications, 51(1), 556-566. https://doi.org/10.1109/TIA.2014.2334734

An application-oriented integration concept for a half-bridge switch assembly has been developed based on the latest generation 70- ?m-thin insulated gate bipolar transistors and diodes, which are rated at 600 V/200 A. This paper addresses the design... Read More about Integrated Half-Bridge Switch Using 70- ?m-Thin Devices and Hollow Interconnects.

Interdiffusion coefficients of binary multiphase systems with consideration of variation in Molar volumes (2014)
Journal Article
Li, J., Agyakwa, P., & Johnson, C. M. (2014). Interdiffusion coefficients of binary multiphase systems with consideration of variation in Molar volumes

This communication introduces a modification to the Wagner method to reveal and correct considerable systematic errors existing in the previously established analytical methods used to calculate the interdiffusion coefficients of binary multiphase sy... Read More about Interdiffusion coefficients of binary multiphase systems with consideration of variation in Molar volumes.

A non-destructive study of crack development during thermal cycling of Al wire bonds using x-ray computed tomography (2014)
Conference Proceeding
Agyakwa, P., Yang, L., Corfield, M., & Johnson, C. M. (2014). A non-destructive study of crack development during thermal cycling of Al wire bonds using x-ray computed tomography.

This paper concerns the non-destructive visualisation of the evolution of damage within ultrasonically bonded alumini-um wires using three dimensional x-ray computed tomography. We demonstrate the potential to observe the progressive accumulation of... Read More about A non-destructive study of crack development during thermal cycling of Al wire bonds using x-ray computed tomography.

Suitable Thicknesses of Base Metal and Interlayer, and Evolution of Phases for Ag/Sn/Ag Transient liquid-phase Joints Used for Power Die Attachment (2014)
Journal Article
Li, J., Agyakwa, P., & Johnson, C. (2014). Suitable Thicknesses of Base Metal and Interlayer, and Evolution of Phases for Ag/Sn/Ag Transient liquid-phase Joints Used for Power Die Attachment. Journal of Electronic Materials, 43(4), 983-995. https://doi.org/10.1007/s11664-013-2971-7

Real Si insulated gate bipolar transistors with conventional Ni/Ag metallization and dummy Si chips with thickened Ni/Ag metallization have both been bonded, at 250°C for 0 min, 40 min, and 640 min, to Ag foil electroplated with 2.7 μm and 6.8 μm thi... Read More about Suitable Thicknesses of Base Metal and Interlayer, and Evolution of Phases for Ag/Sn/Ag Transient liquid-phase Joints Used for Power Die Attachment.

Design Optimization of Quasi-Active Gate Control for Series-Connected Power Devices (2013)
Journal Article
Teerakawanich, N., & Johnson, C. M. (2014). Design Optimization of Quasi-Active Gate Control for Series-Connected Power Devices. IEEE Transactions on Power Electronics, 29(6), 2705-2714. https://doi.org/10.1109/TPEL.2013.2274158

This paper presents a new gate drive circuit for driving a series string of insulated-gate bipolar transistors (IGBTs). The proposed quasi-active gate control (QAGC) circuit is simple to implement as it consists of only a few passive components in ad... Read More about Design Optimization of Quasi-Active Gate Control for Series-Connected Power Devices.

Hybrid half-bridge package for high voltage application
Conference Proceeding
Mouawad, B., Li, J., Castellazzi, A., & Johnson, C. M. (in press). Hybrid half-bridge package for high voltage application.

3D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a hybrid half-bridge in a 3D packaging configuration, dedicated for high voltage application.... Read More about Hybrid half-bridge package for high voltage application.

Low parasitic inductance multi-chip SiC devices packaging technology
Conference Proceeding
Li, J., Mouawad, B., Castellazzi, A., Friedrichs, P., & Johnson, C. M. (in press). Low parasitic inductance multi-chip SiC devices packaging technology.

This paper presents a novel packaging structure which employs stacked substrate and flexible printed circuit board (PCB) to obtain very low parasitic inductance and hence feature high switching speed SiC power devices. A half-bridge module aimed at b... Read More about Low parasitic inductance multi-chip SiC devices packaging technology.

Selection of materials for IGBT modules to achieve stable short circuit failure behaviour
Conference Proceeding
Li, J., Yaqub, I., & Johnson, C. M. (in press). Selection of materials for IGBT modules to achieve stable short circuit failure behaviour.

IGBT modules which can fail to stable short circuit mode have great allocations in electricity network related fields. Sn3.5Ag solder joint and sintered Ag joint for the die attachment and Mo, Cu, Sn3.5Ag, Al and Ag foils for the top side insert mate... Read More about Selection of materials for IGBT modules to achieve stable short circuit failure behaviour.

Reliable integration of a high performance multi-chip half-bridge SiC power module
Conference Proceeding
Mouawad, B., Li, J., Castellazzi, A., & Johnson, C. M. (in press). Reliable integration of a high performance multi-chip half-bridge SiC power module.

Silicon carbide (SiC) devices have been adopted to push the boundaries further in terms of power density, conversion efficiency, switching speed or thermal capability. To have the benefit of such semiconductors, new packaging should be developed to m... Read More about Reliable integration of a high performance multi-chip half-bridge SiC power module.

Packaging/assembling technologies for a high performance SiC-based planar power module
Conference Proceeding
Li, J., Agyakwa, P., Evans, P., Johnson, C. M., Zhao, Y., Wu, Y., & Evans, K. (in press). Packaging/assembling technologies for a high performance SiC-based planar power module.

This work is to investigate the relevant packaging / assembling technologies for developing a SiC-based planar power module which is aimed to meet the requirements such as operating temperature of -60 °C to 200 °C, SiC devices connected to 540 V DC b... Read More about Packaging/assembling technologies for a high performance SiC-based planar power module.